Method for measuring grain size

A technology of grain size and measurement method, which is applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., and can solve the problems of long measurement period

Pending Publication Date: 2020-04-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a method for measuring grain size, to solve the problems of long measurement period and destructiveness in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for measuring grain size
  • Method for measuring grain size

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The method for measuring the grain size proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific examples. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0030] The core idea of ​​the present application is to provide a method for measuring the grain size, by measuring a plurality of measurement points in a measurement path on the surface of a plurality of grains, to obtain the relative heights of a plurality of measurement points; according to the The length of the measurement path and the relative heights of a plurality of the measurement points form a measurement curve; the junction points of two adjacent grains are o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides a method for measuring a grain size. The method comprises the steps of: measuring a plurality of measurement points in a measurement path on the surfaces of a pluralityof grains to obtain the relative heights of the plurality of measurement points; forming a measurement curve according to the length of the measurement path and the relative heights of the plurality of measurement points; obtaining a joint point of two adjacent crystal grains through the measurement curve; and determining the sizes of the crystal grains through the joint points. Therefore, in theprocess of measuring the grain size, the slicing of the semiconductor substrate is avoided, so that the damage to the semiconductor substrate is avoided. Furthermore, due to the fact that slicing of the semiconductor substrate is avoided, the period for measuring the size of the crystal grain is shortened, and the size of the crystal grain can be obtained in time.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for measuring crystal grain size. Background technique [0002] Thin film growth is essential in semiconductor manufacturing processes. And, in the actual product production process, after the film is grown, it is necessary to measure the film to judge the quality of the grown film, which usually includes measuring the thickness and sheet resistance of the film. In addition, for thin films, the "grain size" of the thin film is also an important indicator of the quality of the thin film. At present, when measuring the grain size of a thin film, the thin film is usually sliced, and then the grain size of the thin film is measured by a scanning electron microscope. However, in the existing method for measuring the grain size, the thin film needs to be sliced, which is destructive and will cause the corresponding substrate to be scrapped. Moreover, using the existi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/66
CPCH01L22/20H01L22/30
Inventor 孙洪福罗锟丁同国姜国伟王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap