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Method for measuring grain size

A technology of grain size and measurement method, which is applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., and can solve the problems of long measurement period

Pending Publication Date: 2020-04-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0003] The object of the present invention is to provide a method for measuring grain size, to solve the problems of long measurement period and destructiveness in the prior art

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  • Method for measuring grain size

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Embodiment Construction

[0029] The method for measuring the grain size proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific examples. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0030] The core idea of ​​the present application is to provide a method for measuring the grain size, by measuring a plurality of measurement points in a measurement path on the surface of a plurality of grains, to obtain the relative heights of a plurality of measurement points; according to the The length of the measurement path and the relative heights of a plurality of the measurement points form a measurement curve; the junction points of two adjacent grains are o...

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Abstract

The present invention provides a method for measuring a grain size. The method comprises the steps of: measuring a plurality of measurement points in a measurement path on the surfaces of a pluralityof grains to obtain the relative heights of the plurality of measurement points; forming a measurement curve according to the length of the measurement path and the relative heights of the plurality of measurement points; obtaining a joint point of two adjacent crystal grains through the measurement curve; and determining the sizes of the crystal grains through the joint points. Therefore, in theprocess of measuring the grain size, the slicing of the semiconductor substrate is avoided, so that the damage to the semiconductor substrate is avoided. Furthermore, due to the fact that slicing of the semiconductor substrate is avoided, the period for measuring the size of the crystal grain is shortened, and the size of the crystal grain can be obtained in time.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for measuring crystal grain size. Background technique [0002] Thin film growth is essential in semiconductor manufacturing processes. And, in the actual product production process, after the film is grown, it is necessary to measure the film to judge the quality of the grown film, which usually includes measuring the thickness and sheet resistance of the film. In addition, for thin films, the "grain size" of the thin film is also an important indicator of the quality of the thin film. At present, when measuring the grain size of a thin film, the thin film is usually sliced, and then the grain size of the thin film is measured by a scanning electron microscope. However, in the existing method for measuring the grain size, the thin film needs to be sliced, which is destructive and will cause the corresponding substrate to be scrapped. Moreover, using the existi...

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/20H01L22/30
Inventor 孙洪福罗锟丁同国姜国伟王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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