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Method for depositing oxide film by peald using nitrogen

An oxide film, nitrogen technology, applied in gaseous chemical plating, electrical components, coatings, etc., can solve the problems of photoresist etching, difficult patterning size control within the desired range, etc.

Pending Publication Date: 2020-04-14
ASM IP HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for the deposition of SiO 2 Conventional PEALD of membranes using Ar and O 2 The plasma of the mixed gas, where the photoresist is exposed to the plasma at the beginning of the deposition, until the photoresist is covered by the SiO2 film, which causes the photoresist to be etched and makes it difficult to pattern the size control within expectations

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  • Method for depositing oxide film by peald using nitrogen
  • Method for depositing oxide film by peald using nitrogen
  • Method for depositing oxide film by peald using nitrogen

Examples

Experimental program
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example

[0063] Reference example 1

[0064] A photoresist layer (a blanket photoresist composed of, for example, novolac designed for argon fluoride laser (ArF) lithography) is considered to be Figure 4 The thickness of the initial CD ("PR initial") shown in was formed on a 300 mm substrate, and the substrate was then loaded into Figure 1A device shown in . use Figure 4 The photoresist layer was exposed to the plasma using the gas shown in ("plasma gas") by applying the gas under the conditions shown in Table 2 below. Figure 4 The RF power (13.56 MHz) indicated in ("RF Power") was generated to assess plasma damage to the photoresist layer by measuring the layer thickness reduction after exposure to plasma. The results are shown in Figure 4 middle.

[0065] Table 2 (values ​​are approximate)

[0066]

[0067] Such as Figure 4 As shown in , although all plasma gases induced a reduction in layer thickness (see Thickness after plasma exposure (“PR after”)), exposure to ...

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Abstract

The application discloses a method for depositing oxide film by PEALD using nitrogen, concretely a method of depositing an oxide film on a template for patterning in semiconductor fabrication. The method includes: (i) providing a template having patterned structures thereon in a reaction space; and (ii) depositing an oxide film on the template by plasma-enhanced atomic layer deposition (PEALD) using nitrogen gas as a carrier gas and also as a dilution gas, thereby entirely covering with the oxide film an exposed top surface of the template and the patterned structures.

Description

technical field [0001] The present invention generally relates to a method of depositing an oxide film on an underlying layer by plasma enhanced atomic layer deposition (PEALD) without substantially damaging the underlying layer. Background technique [0002] Deposition of SiO by PEALD 2 Films are a method that can be performed at low temperatures, eg, 100° C. or less, and thus enable efficient deposition of conformal films on thermally susceptible organic films by utilizing low temperature deposition. This approach applies to patterning processes such as those by spacer-defined double patterning (SDDP) or spacer-defined quadruple patterning (SDQP) (more generally referred to as "SDxP"). However, for the deposition of SiO 2 Conventional PEALD of membranes using Ar and O 2 The plasma of the mixed gas, where the photoresist is exposed to the plasma at the beginning of the deposition, until the photoresist is covered by the SiO2 film, which causes the photoresist to be etche...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/40H01L21/02
CPCC23C16/45536C23C16/40H01L21/0228H01L21/02164H01L21/02274H01L21/0337H01L21/02219H01L21/31116C23C16/45534C23C16/401C23C16/4554C23C16/405H01L21/02554H01L21/306H01J37/32174C23C16/45525H01L21/0338C23C16/45553H01L21/02186H01L21/02189H01L21/02183H01L21/0332H01L21/0335C23C16/042
Inventor 财津优深泽笃毅贾玛·特里加伽玛
Owner ASM IP HLDG BV