A method for evaluating the erasing and writing performance of flash memory under thermoelectric stress

Abstract

The invention provides a method for evaluating the erasing and writing performance of a Flash memory under thermoelectric stress. The steps are as follows: 1. Preliminary screening of the Flash memory, performing a full-chip erasing and writing test on device samples, and rejecting invalid devices; 2. Selective erasing and writing Test algorithm, select test temperature groups, and simulate different intensities of environmental stress; 3: Perform erasing and writing cycle tests, record the number of read data errors in each temperature group, all devices fail or the test stops when the preset test time is reached; 4: Screening test Data, calculate the average trouble-free working time θ of each temperature group; five: calculate the functional relationship between the ambient temperature and the temperature average trouble-free working time; six: find the average trouble-free working time at room temperature; seven: according to the erasing and writing cycle test , the time used for a single cycle and the number of erasing and writing times, and the number of times of erasing and writing at room temperature is calculated; Eight: Compared with the theoretical erasing and writing times of this type of device, evaluate whether the erasing and writing performance of this batch of devices meets the requirements; through the above steps, you can use The number of erasing and writing times evaluates the erasing and writing performance of the Flash memory, reduces the test time, provides sufficient reliability basis for the testing and evaluation of the Flash memory, and has practical application value.

Description

[0001] (1) Technical field: [0002] The invention relates to a method for evaluating the performance of electronic components, in particular to a method for evaluating the erasing performance of a Flash memory under thermoelectric stress, which belongs to the reliability evaluation of electronic components. [0003] (2) Background technology [0004] Flash memory (or flash memory) is a commonly used non-volatile memory. This device can save data when it is not powered on, and can record and read data when it is powered on. It can be erased and written up to 100,000 times. This feature of Flash memory makes it the basis of storage media for various portable digital devices. It is widely used in civilian fields, and its status in aerospace, military equipment, aviation and other fields is also getting higher and higher. In order to improve storage efficiency, the process size of Flash memory is continuously reduced, the erasing and writing speed and integration level are greatly...

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is in order to provide a method for evaluating the erasing and writing performance of Flash memory under thermoelectric stress, which can solve the problems that the current evaluation basis for the erasing and writing performance of Flash memory is few and the method efficiency is low

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