Bulk acoustic wave resonator with central defect structure, filter and electronic equipment

Abstract

The present invention relates to a bulk acoustic wave resonator, and the resonator comprises a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, wherein anoverlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator; a central defect structure is formed in the effective area; in a plan view of the resonator, at least one part of the central defect structure is positioned in a high-temperature region of the effective region; the high-temperature area is an area with the mass center of the effective area as the circle center and r as the radius, the radius r is 50% of the radius of an equivalent circle of the effectivearea where the high-temperature area is located, and the equivalent circle is a circle with the mass center of the effective area as the circle center and the area of the circle equal to the area of the effective area. The invention also relates to a filter and an electronic device.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter, and an electronic device having one of the above components. Background technique [0002] Film Bulk Acoustic Resonator (FBAR, also known as Bulk Acoustic Resonator, also known as BAW) as a MEMS chip plays an important role in the field of communication, FBAR filter has a small size (μm level), Excellent characteristics such as high resonant frequency (GHz), high quality factor (1000), large power capacity, and good roll-off effect are gradually replacing traditional surface acoustic wave (SAW) filters and ceramic filters, and play an important role in the field of wireless communication radio frequency. It has a huge effect, and its high sensitivity advantage can also be applied to sensing fields such as biology, physics, and medicine. [0003] The main structure of the thin film bulk acoustic resonator is a "sand...

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Problems solved by technology

[0010] When the above-mentioned resonator is working, a part of the acoustic vibration energy and electric energy will inevitably be converted into heat energy. As the power of the resonator increases, the problem of heating becomes more and more significant, resulting in an excessively high operating temperature of the resonator.

High temperature not only adversely affects the frequency characteristics of the resonator, but also accelerates the aging and damage of various components of the device

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