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Thermally activated delayed fluorescence molecule, preparation method thereof and electro-thermally activated delayed fluorescence device

A technology of thermally activated delayed and fluorescent molecules, applied in the field of chemistry, can solve problems such as inability to obtain device performance, and achieve the effect of suppressing non-radiative transition rate and high photoluminescence quantum yield

Pending Publication Date: 2020-04-17
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, green and sky blue TADF materials have achieved good external quantum efficiency (EQE); however, wavelength TADF materials cannot obtain excellent device performance due to the energy gap law.

Method used

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  • Thermally activated delayed fluorescence molecule, preparation method thereof and electro-thermally activated delayed fluorescence device
  • Thermally activated delayed fluorescence molecule, preparation method thereof and electro-thermally activated delayed fluorescence device
  • Thermally activated delayed fluorescence molecule, preparation method thereof and electro-thermally activated delayed fluorescence device

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Embodiment

[0034] In this embodiment, the thermally activated delayed fluorescent molecule of the present invention includes an electron donor D, an electron acceptor A and a π bridge connecting the electron donor D and the electron acceptor A, figure 1 is the fluorescence emission spectrum of the thermally activated delayed fluorescent molecule in this example. figure 2 is the photophysical data table of the thermally activated delayed fluorescent molecules in this example. Wherein, the electron acceptor A is anthraquinone, and in other preferred embodiments of the present invention, the electron acceptor A can also be other common acceptor materials.

[0035] The general structural formula of the thermally activated delayed fluorescent molecule of the present invention is:

[0036] Wherein, π is the π bridge in this embodiment.

[0037] The structure of the π bridge includes At least one of them, in this embodiment, the structure of the π bridge is preferably

[0038] The...

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Abstract

The invention discloses a thermally activated delayed fluorescence molecule, a preparation method thereof and an electro-thermally activated delayed fluorescence device. The thermally activated delayed fluorescence molecule comprises an electron donor, an electron acceptor and a pi bridge connecting the electron donor with the electron acceptor, and the pi bridge comprises an aryl pi bridge. The thermally activated delayed fluorescence molecule can effectively inhibit the non-radiative transition rate through the introduction of a large planar aryl pi bridge, so that the high photoluminescencequantum yield is obtained.

Description

technical field [0001] The invention relates to the field of chemistry, in particular to a thermally activated delayed fluorescent molecule, a preparation method thereof, and an electrothermally activated delayed fluorescent device. Background technique [0002] Organic light-emitting diodes (organic lighting-emitting diodes, OLEDs), due to active light emission, large viewing angle, fast response speed, wide temperature range, low driving voltage, low power consumption, high brightness, simple production process, light and thin, and can The advantages of flexible display have shown great application prospects in the fields of OLED display and lighting, attracting the attention of researchers and companies. At present, Samsung and LG have realized the application of OLEDs in mobile phones. In OLED, the pros and cons of the light-emitting layer material will play a decisive role in whether the OLED can be industrialized. The usual light-emitting layer material consists of h...

Claims

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Application Information

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IPC IPC(8): C07C225/24C07D405/04C07D409/04C07D401/04C09K11/06H01L51/54
CPCC07C225/24C07D405/04C07D409/04C07D401/04C09K11/06C09K2211/1029C09K2211/1007C09K2211/1011C09K2211/1014H10K85/653H10K85/622H10K85/655H10K85/654H10K85/6572
Inventor 王彦杰
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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