49results about How to "High photoluminescence quantum yield" patented technology

Quantum dot (QD) LEDs useful for plant, algael and photosynthetic bacterial growth applications. The QD LEDs utilizes a solid state LED (typically emitting blue or UV light) as the primary light source and one or more QD elements as a secondary light source that down-converts the primary light. The emission profile of the QD LED can be tuned to correspond to the absorbance spectrum of one or more photosynthetic pigments of the organism.

The invention relates to a preparation method of a manganese-doped two-dimensional lead halide perovskite material with the high photoluminescence quantum yield. The preparation method mainly comprises the following steps that (1) haloid acid is added into organic amine according to a 1:1 molar ratio, and ice-bath stirring is conducted for 15 minutes; (2) the solution is placed in a 80 DEG C drying oven overnight, till crystals are completely dissolved out; (3) the crystals are placed into the 80 DEG C drying oven to be dried after being washed clearly with absolute ethyl alcohol; and (4) organic halate, lead halide and manganese halide with certain proportion are added into a mortar and uniformly ground, and an end product is obtained. The general formula of the prepared manganese-doped lead halide perovskite meets (C<n>H<2n+1>NH3)2Pb<1-x>Mn<x>X4, wherein the value of x is between 0.001 and 0.95, the lead halide perovskite material has an excellent optical property, the luminescence center wavelength is between 595 and 630 nm, and the quantum yield emitted by Mn<2+> reaches 90%. By adjusting the chain length and the structure of organic amine salt and sorts of halide ions, controlling of the wavelength emitted by Mn<2+> is achieved, and the preparation method of manganese-doped two-dimensional lead halide perovskite is simple and rapid.

The invention relates to an all-inorganic halogen perovskite nano-crystal and a preparation method thereof. The preparation method comprises: preparing a Cs4PbX6 nano-crystal, and dispersing the Cs4PbX6 nano-crystal in a non-polar solvent to obtain a dispersion solution; and injecting water into the dispersion solution, and oscillating to convert the Cs4PbX6 nano-crystal into a CsPbX3 nano-crystal. According to the present invention, through the water initiation process, the conversion of the Cs4PbX6 nano-crystal incapable of emitting fluorescence into the CsPbX3 nano-crystal with excellent light emitting performance under normal temperature and normal pressure is achieved; the method has characteristics of simple process and convenient operation; and the prepared Cs4PbX6 nano-crystal hasadvantages of good dispersibility, excellent light emitting performance and narrow emission width, and has the photoluminescence quantum yield of up to 75%, wherein the optical properties can be adjusted within the whole visible light range.

The invention provides a quantum dot. The quantum dot comprises a CdSe core, a first shell layer and a second shell layer, wherein the CdSe core is covered with the first shell layer, the first shell layer is covered with the second shell layer, the first shell layer serves as an excition limiting layer, the second shell layer serves as a stress compensation layer, the first shell layer is a ZnS layer, and the second shell layer is a ZnCdS layer. Due to the design of the external shell layers of the CdSe colloid quantum dot, the CdSe/ZnS/ZnCdS colloid quantum dot with the stress compensation function is synthetised. Compared with a traditional CdSe/ZnCdS/ZnS quantum dot, the quantum dot has the advantages that the photoluminescence quantum yield is higher, the photoluminescence efficiency of a semiconductor light emitting diode made of the quantum dot is higher, the spectral purity is higher under the high injection current condition, and thus the quantum dot is more suitable for manufacturing of a high-definition display screen.

The invention relates to a low-temperature doped perovskite thin film with high photoluminescence quantum yield and a preparation method thereof. Low-temperature precursor liquid metal lanthanum ion doping is adopted, and the perovskite thin film with the high fluorescence quantum yield can be obtained without high-temperature injection and insulation ligand auxiliary crystallization. For perovskite with different band gaps, metal lanthanum ion doping can be carried out, and red, green and blue three-primary-color fluorescence emission can be basically obtained under 365 nm laser excitation. According to the method, in a relatively low-temperature environment, through temperature gradient annealing and solvent atmosphere annealing, the prepared perovskite crystal is higher in quality and fewer in defects, and a non-radiative composite path is effectively inhibited. The prepared perovskite thin film has a good application prospect in the field of semiconductor luminescence, and the efficient and simple preparation method of the perovskite thin film has great potential for commercial application of perovskite materials.

The invention provides an organic small-molecule luminescent material and an organic electroluminescent device. The organic small-molecule luminescent material provided by the invention is obtained bycoupling a novel acridine donor unit 10H-spiro[acridine-9,2'-adamantane] with a receptor unit. The organic small-molecule luminescent material has a single structure and a determined molecular weight, is convenient for purification and high in multiple synthetic reproducibility, and has low sublimation temperature and high decomposition temperature and stable film morphology; since the non-aromatic rigid structure adamantine is used as a donor part structure, the organic small-molecule luminescent material has a high photoluminescent quantum yield in the film state; when the organic small-molecule luminescent material is applied to the organic electroluminescent device, the problem of low efficiency of the device caused by serious non-radiative attenuation due to configuration relaxationof an excited state molecule can be effectively solved.

The present invention relates to conjugated polyelectrolyte (CPE) or oligoelectrolyte (COE) compounds represented by general structural formulae (I)-(IV), or a salt thereof and methods of using these compounds to detect targets in samples. In particular, the methods include: (1) exposing a sample to a compound of structural formula (I), (II) or (IV) or a salt thereof, allowing the compound to bind to a target and detecting a signal produced by the compound; (2) functionalizing a solid support with a ligand, incubating the sample with a charged CPE or COE and detecting the fluorescence of the solid support and thereby detecting the target or (3) functionalizing a surface of a solid support with a charged ligand, thereby creating a charge on the surface of the solid support; incubating the ligand-functionalized solid support with a sample, whereupon binding of the target, the charge on the surface of the solid support switches; incubating the sample with CPE or COE that has a complementary charge to the charge of the target-bound surface; and detecting the fluorescence of the solid support and thereby detecting the target. The compounds of the present invention possess high photoluminescence quantum yields in biological media, low cytotoxicity, and excellent environmental stability and photostability and can be used in biosensor and bioimaging applications.

The invention provides a green thermal activation delayed fluorescence material and a synthesis method thereof and an electroluminescence device. The green thermal activation delayed fluorescence material is a target compound synthesized in reaction of an electron donor and an electron acceptor, and the target compound is of a D-A molecular structure; the electron acceptor is a plane electron acceptor with an ultralow triplet energy level, and a triplet energy level range of the target compound is 2.0-3.0 eV. The synthesis method of the green thermal activation delayed fluorescence material comprises the steps of a reaction liquid preparation step, a target compound synthesis step, an extraction step and a target compound purification treatment step. The electroluminescence device comprises a substrate layer, a hole transporting and injecting layer, a luminescence layer, an electron transporting and a cathode layer. The green thermal activation delayed fluorescence material and the synthesis method thereof and the electroluminescence device have the technical effects that the green thermal activation delayed fluorescence material with high performance is synthesized, the synthesisefficiency is improved, and the high-efficiency organic electroluminescence device is prepared.

The invention relates to a preparation method of a stable luminescent flexible perovskite quantum dot film and a product thereof, and belongs to the field of flexible luminescent materials. The perovskite quantum dot thin film is prepared from perovskite quantum dots CsPbBr3@SiO2 and PDMS (Polydimethylsiloxane). The preparation principle of the film is that the CsPbBr3@SiO2 quantum dots are embedded in the PDMS, so that the film has the light-emitting property of the CsPbBr3 quantum dots and also has the flexible characteristic of the PDMS. In addition, due to the double protection of SiO2 and PDMS on the CsPbBr3 quantum dots, the CsPbBr3@SiO2@PDMS thin film is very friendly to the environment. The film synthesis method is simple, easy to operate, low in equipment requirement, low in cost, low in energy consumption and suitable for expanded production.

The invention discloses a thermally activated delayed fluorescent molecule and a preparation method thereof and an electro-thermally activated delayed fluorescent device. The thermally activated delayed fluorescent molecule comprises an electron donor and an electron acceptor, wherein the electron acceptor comprises a tripolyquinolinone group. The thermally activated delayed fluorescent molecule and the preparation method thereof and the electro-thermally activated delayed fluorescent device has the beneficial effects that the thermally activated delayed fluorescent molecule has the tripolyquinolinone group which contains a carbonyl structure, so that the thermally activated delayed fluorescent molecule has a high intersystem crossing rate constant and a high anti-intersystem crossing rateconstant, the decrease of a radiation transition rate due to the energy gap law can be effectively suppressed, and a high photoluminescence quantum yield is obtained.

The invention is a compound represented by any one of Structural Formulas (I)-(IV), or a salt thereof, wherein the values and alternative values for the variables are as defined in the Detailed Description of the Invention. Methods using a compound of Structural Formula (I)-(IV), or a salt thereof, are also presented.

A thermally activated delayed fluorescence (TADF) material including a compound represented by formula (I). The TADF material can be applied to an organic light-emitting layer, thereby realizing a series of high-performance TADF electronic devices.

The invention relates to a SrCl2 doped perovskite quantum dot high-efficiency luminescent LED and a preparation method thereof, belonging to the lighting technical field. ITO is used as cathode, ZnO quantum dot film/polyethyleneimine bilayer is used as electron transport layer and hole barrier layer, the thickness of ZnO quantum dot film is 40-50nm, the thickness of polyethyleneimine layer is 10-20nm, and ZnO quantum dot film/polyethyleneimine bilayer is used as electron transport layer. The SrCl 12 doped perovskite quantum dot is a luminescent layer with a thickness of 60 -75nm. 4, 4, 4-Tris(carbazol-9-yl) triphenylamine is used as a hole transport layer and an electron blocking layer with the thickness of 50-65nm. MoO3/Au is the anode, the thickness of MoO3 is 70-100nm, and the thickness of Au is 10 -20nm. As that SrCl2 dope perovskite quantum dot of the invention is used as a light emit layer, an LED device is prepared, the performance of the device is obviously enhanced, and the device has low threshold work voltage and high external quantum efficiency.

The invention provides an electroluminescent material, a preparation method of the electroluminescent material and a luminescent device. A first intermediate is generated from a first reactant and a second reactant through a reaction, and the electroluminescent material is generated from the first intermediate and a third reactant through a reaction. A phenanthrene nucleus electron acceptor of theelectroluminescent material comprises two nitrogen atoms, so that not only are the rigidity and the electron withdrawing capability of the electron acceptor improved, but also velocities of intersystem crossing and anti-intersystem crossing can be increased, the overlapping degree of a highest occupied molecular orbital and a lowest occupied molecular orbital of molecules can be reduced, a smallfirst single triplet-state energy level difference and a high photoluminescence quantum yield can be achieved, and furthermore, the electroluminescent material which is high in efficiency and capableof emitting dark red light, and the preparation method of the electroluminescent material and the luminescent device, can be achieved.

The invention belongs to the technical field of electroluminescent materials, and relates to a novel iridium complex with a main ligand containing carbazolyl, in the structure, pyridine and derivatives thereof are introduced into the 1-site of carbazole to realize steric hindrance and limit the free relaxation of a benzene ring at the 9-site of carbazole, so that the non-radiative transition process of molecules can be inhibited. The iridium complex disclosed by the invention has very high photoluminescence quantum yield and short excited state service life. A device prepared from the iridiumcomplex is excellent in performance, has high external quantum efficiency, low starting voltage and low efficiency roll-off, and has potential application value in the field of OLED illumination and display.

The invention provides a deep red photothermally activated delayed fluorescence material as well as a preparation method thereof and electroluminescent devices. The deep red photothermally activated delayed fluorescence (TADF) material comprises a compound composed of a receptor A and a donor D, and the compound has a following structural general formula represented by a formula 1 shown in the description: D-A, wherein in the formula 1, the receptor A is any one selected from structural formulae shown in the description, and the donor D is any one selected from structural formulae shown in thedescription.

The invention discloses a preparation method of a blue light perovskite light-emitting diode. The preparation method comprises the following steps: preparing a passivating agent TMBBr, preparing a TMB2PbBr4 solution, synthesizing CsPbBr3 powder, preparing a quasi-two-dimensional blue light perovskite PEAxPA2-x (CsPbBr3) n-1PbBr4: TMBBr precursor solution, and preparing a three-dimensional mixed halogen perovskite light-emitting diode device. According to the invention, bis (trifluoromethylsulfonyl) imide sodium is used as an interface modification layer of nickel oxide (NiOx), and 4-(trifluoromethyl) benzamide hydrobromide is introduced into a quasi-two-dimensional perovskite precursor solution, so that the device has excellent spectral stability and better device performance.

The invention discloses a rare earth complex agricultural light conversion film which is composed of at least one layer of co-extrusion blown film, naphthyridine light conversion agents are added into one or more layers of the co-extrusion blown film, the co-extrusion blown film layer containing the naphthyridine light conversion agents is a light conversion layer, and the addition mass percentage of the naphthyridine light conversion agents in the light conversion layer is 0.2-2%; an alkaline additive is also added into the light conversion layer containing the naphthyridine light conversion agent, and the adding mass percent of the alkaline additive is 0.2-5%. The naphthyridine rare earth complex light conversion film prepared by the invention can obtain high photoluminescence quantum yield and excellent light stability, and solves the technical problems of low luminous efficiency and unstable quality of the existing light conversion film prepared based on naphthyridine rare earth complexes.