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Preparation method of stable and light-emitting flexible perovskite quantum dot film and product of stable and light-emitting flexible perovskite quantum dot film

A perovskite and quantum dot technology, applied in luminescent materials, chemical instruments and methods, nano-optics, etc., can solve the problems of photoluminescence quenching, performance degradation of perovskite quantum dots, etc., and meet the requirements of easy operation and equipment Not high, good flexibility

Pending Publication Date: 2021-12-03
CHONGQING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, when perovskite quantum dots are exposed to the air environment for a long time, the humidity, light and temperature in the air will cause the degradation of the performance of perovskite quantum dots and lead to severe photoluminescence (PL) quenching.

Method used

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  • Preparation method of stable and light-emitting flexible perovskite quantum dot film and product of stable and light-emitting flexible perovskite quantum dot film
  • Preparation method of stable and light-emitting flexible perovskite quantum dot film and product of stable and light-emitting flexible perovskite quantum dot film
  • Preparation method of stable and light-emitting flexible perovskite quantum dot film and product of stable and light-emitting flexible perovskite quantum dot film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Preparation of perovskite quantum dot films (CsPbBr 3 @SiO 2 @PDMS), including the following steps:

[0035] (1) CsBr and PbBr 2 Dissolve in 50ml deionized water, stir at 80°C for 30min, make it evenly mixed to form a mixed solution;

[0036] (2) Silicon molecular sieve (MCM-41 molecular sieve, pore size 3.7nm, specific surface area 1000m 2 / g) added to the mixed solution prepared in step (1), stirred for 1 hour, mixed uniformly, and dried at a temperature of 80° C. for 12 hours to obtain the mixture;

[0037] (3) After grinding the mixture in step (2) for 10 minutes in an agate grinding body, in a tube furnace, the temperature is raised to 700°C at a heating rate of 5°C / min, calcined for 30min and then cooled to room temperature to obtain powder;

[0038] (4) Grind the powder in step (3) for 10 minutes in agate grinding body, filter and wash with deionized water several times with 0.22um precision filter paper, and then centrifuge to remove the external CsPbBr 3 ...

Embodiment 2

[0041] Preparation of perovskite quantum dot films (CsPbBr 3 @SiO 2 @PDMS), including the following steps:

[0042] (1) CsBr and PbBr 2 Dissolve in 50ml of deionized water, stir at 80°C for 45min, make it evenly mixed to form a mixed solution;

[0043] (2) Silicon molecular sieve (MCM-41 molecular sieve, pore diameter 3.7nm, specific surface area 900m 2 / g) added to the mixed solution prepared in step (1), stirred for 1.2 hours to make it evenly mixed, and dried at a temperature of 60°C for 11 hours to obtain the mixture;

[0044] (3) After grinding the mixture in step (2) for 7 minutes in an agate grinding body, in a tube furnace, the temperature is raised to 700°C at a heating rate of 5°C / min, calcined for 30min and then cooled to room temperature to obtain powder;

[0045] (4) Grind the powder in step (3) for 7 minutes in agate grinding body, filter and wash with deionized water several times with 0.45um precision filter paper, and then centrifuge to remove the externa...

Embodiment 3

[0048] Preparation of perovskite quantum dot films (CsPbBr 3 @SiO 2 @PDMS), including the following steps:

[0049] (1) CsBr and PbBr 2 Dissolve in 50ml deionized water, stir at 80°C for 60min, make it evenly mixed to form a mixed solution;

[0050] (2) Silicon molecular sieve (MCM-41 molecular sieve, pore diameter 3.7nm, specific surface area 950m 2 / g) added to the mixed solution prepared in step (1), stirred for 1.5 hours to make it evenly mixed, and dried at a temperature of 70°C for 10 hours to obtain the mixture;

[0051] (3) After grinding the mixture in step (2) for 5 minutes in an agate grinding body, in a tube furnace, the temperature is raised to 700°C at a heating rate of 5°C / min, calcined for 30min and then cooled to room temperature to obtain powder;

[0052] (4) Grind the powder in step (3) for 5 minutes in an agate grinding body, filter and wash with deionized water several times with 0.33um precision filter paper, and then centrifuge to remove the externa...

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Abstract

The invention relates to a preparation method of a stable luminescent flexible perovskite quantum dot film and a product thereof, and belongs to the field of flexible luminescent materials. The perovskite quantum dot thin film is prepared from perovskite quantum dots CsPbBr3@SiO2 and PDMS (Polydimethylsiloxane). The preparation principle of the film is that the CsPbBr3@SiO2 quantum dots are embedded in the PDMS, so that the film has the light-emitting property of the CsPbBr3 quantum dots and also has the flexible characteristic of the PDMS. In addition, due to the double protection of SiO2 and PDMS on the CsPbBr3 quantum dots, the CsPbBr3@SiO2@PDMS thin film is very friendly to the environment. The film synthesis method is simple, easy to operate, low in equipment requirement, low in cost, low in energy consumption and suitable for expanded production.

Description

technical field [0001] The invention belongs to the field of flexible light-emitting materials, and in particular relates to a preparation method and a product of a perovskite quantum dot film that is stable and flexible in light emission. Background technique [0002] Perovskite quantum dots have attracted extensive attention due to their excellent optical properties such as high photoluminescence quantum yield, tunable emission spectrum and bandgap, excellent charge transport performance, and short radiative lifetime. Although perovskite quantum dots have many excellent properties, their instability is the biggest problem facing practical applications. For example, when perovskite quantum dots are exposed to the air environment for a long time, the humidity, light, and temperature in the air will cause the degradation of the performance of perovskite quantum dots and lead to severe photoluminescence (PL) quenching. [0003] To sum up, in order to maintain the excellent pe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L83/04C08K3/16C08K3/36C08K7/26C09K11/02C09K11/66B82Y40/00B82Y20/00B82Y30/00
CPCC08J5/18C09K11/025C09K11/665B82Y20/00B82Y30/00B82Y40/00C08J2383/04C08K3/16C08K3/36C08K7/26
Inventor 唐孝生田长青黄强戚飞张楠张良睿
Owner CHONGQING UNIV OF POSTS & TELECOMM
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