Near-infrared photothermal activation delayed fluorescent material and preparation method thereof and display device

A thermally activated delayed, near-infrared light technology, applied in luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of short service life, lack of thermally activated delayed fluorescent materials, and low fluorescence efficiency. Effects of fast reverse intersystem crossing constant, reduction of lowest single-triplet energy level difference, and high photoluminescence quantum yield

Inactive Publication Date: 2019-02-01
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a near-infrared photothermally activated delayed fluorescent material, its preparation method, and a display device to solve the problem of lack of thermally activated delayed fluorescent materials with excellent thermally activated delayed fluorescent properties in the prior art and near-infrared light The lack of thermally activated delayed fluorescent materials in the field
It also solves the problems of low fluorescence efficiency and short service life in existing display devices

Method used

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  • Near-infrared photothermal activation delayed fluorescent material and preparation method thereof and display device
  • Near-infrared photothermal activation delayed fluorescent material and preparation method thereof and display device
  • Near-infrared photothermal activation delayed fluorescent material and preparation method thereof and display device

Examples

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Embodiment 1

[0034] This embodiment is a preferred embodiment.

[0035] The molecular structure of the near-infrared photothermally activated delayed fluorescence material provided in this example is the D-A-D structure generated by the reaction of the electron donor (D) and the electron acceptor (A), and the electron acceptor (A) is in the triplet energy level range The planar electron acceptor (A) with a value of 1.30-1.80, and the electron donor (D) have strong electron donating ability.

[0036] In this example, the compound with electron acceptor (A) is 2,5-bis(4-bromophenyl)imidazo[4,5-d]imidazole, and the compound with electron donor (D) is 9'9 -Dimethylacridine. The preparation process is as figure 2 As shown, the specific preparation steps are as follows:

[0037] Synthesis of the target object: In a 100mL two-neck flask, add 2,5-bis(4-bromophenyl)imidazo[4,5-d]imidazole (2.12g, 5mmol), 9'9-dimethylacridine Pyridine (2.5g, 12mmol), palladium acetate (90mg, 0.4mmol) and tri-te...

Embodiment 2

[0050] The near-infrared photothermally activated delayed fluorescence material provided in this example adopts a D-A-D structure in which an electron donor (D) and an electron acceptor (A) are combined, and the electron acceptor (A) has a triplet energy level range of 1.30 -1.80 planar electron acceptor (A) and electron donor (D) have strong electron donating ability.

[0051] In this example, the compound with electron acceptor (A) is 2,5-bis(4-bromophenyl)imidazo[4,5-d]imidazole, and the compound with electron donor (D) is phenoxazine . The preparation process is as figure 2 As shown, the specific preparation steps are as follows:

[0052] Synthesis of the target object: In a 100mL two-necked flask, add 2,5-bis(4-bromophenyl)imidazo[4,5-d]imidazole (2.12g, 5mmol), phenoxazine (2.2g, 12mmol ), palladium acetate (90mg, 0.4mmol) and tri-tert-butylphosphine tetrafluoroborate (0.34g, 1.2mmol), then place the reaction vessel in a box filled with argon, then Sodium tert-butox...

Embodiment 3

[0065] The near-infrared photothermally activated delayed fluorescence material provided in this example adopts a D-A-D structure in which an electron donor (D) and an electron acceptor (A) are combined, and the electron acceptor (A) has a triplet energy level range of 1.30 -1.80 planar electron acceptor (A) and electron donor (D) have strong electron donating ability.

[0066] In this example, the compound with electron acceptor (A) is 2,5-bis(4-bromophenyl)imidazo[4,5-d]imidazole, and the compound with electron donor (D) is phenothiazine . The preparation process is as figure 2 As shown, the specific preparation steps are as follows:

[0067] Synthesis of the target object: In a 100mL two-necked flask, add 2,5-bis(4-bromophenyl)imidazo[4,5-d]imidazole (2.12g, 5mmol), phenothiazine (2.2g, 12mmol ), palladium acetate (90mg, 0.4mmol) and tri-tert-butylphosphine tetrafluoroborate (0.34g, 1.2mmol), then place the reaction vessel in a box filled with argon, then Sodium tert-b...

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PUM

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Abstract

The invention provides a near-infrared photothermal activation delayed fluorescent material and a preparation method thereof and a display device. The molecular structure of the near-infrared photothermal activation delayed fluorescent material is a D-A-D structure or a D-A structure formed by a reaction between an electron donor (D) and an electron acceptor (A). The electron acceptor (A) is a planar electron acceptor (A) having a triplet energy level ranging from 1.30 to 1.80. The preparation method includes a step of synthesizing a target, a step of extracting a target, and a step of purifying a target. The process is simple, purification is easy, and yield is high. The display device has a light-emitting layer comprising the near-infrared photothermal activation delayed fluorescent material. The material has higher fluorescence efficiency and better stability; and the luminous efficiency of the display device is improved and its service life is prolonged.

Description

technical field [0001] The invention relates to the technical field of organic electroluminescent materials, in particular to a near-infrared photothermally activated delayed fluorescent material, a preparation method thereof, and a display device. Background technique [0002] Organic electroluminescence is a luminescence phenomenon realized by using organic materials under the excitation of an external electric field and current. [0003] In 1963, Pope et al. of New York University in the United States first observed the phenomenon of organic electroluminescence using single crystal anthracene as the light-emitting layer at a driving voltage of 100V. However, due to defects such as low luminous efficiency and high driving voltage, it did not cause widespread focus on. Until 1987, C.W.Tang et al. of Kodak Corporation of the United States used vacuum evaporation technology to use aromatic diamine as the hole transport layer and 8-hydroxyquinoline aluminum (Alq3) as the elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D487/04C09K11/06H01L51/50
CPCC09K11/06C07D487/04C09K2211/1037C09K2211/1033C09K2211/1044C09K2211/1029H10K85/6572H10K85/657H10K50/12H10K50/11C07D413/14H10K2101/20C09K2211/1007C09K2211/1018H10K50/15H10K50/16
Inventor 罗佳佳
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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