Thermally activated delayed fluorescent molecule and preparation method thereof and electro-thermally activated delayed fluorescent device
A technology of thermally activated delayed and fluorescent molecules, which is applied in the chemical field, can solve the problems of limitations and inability to obtain excellent device performance, and achieve the effect of suppressing the reduction of radiative transition rate and high photoluminescence quantum yield
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Embodiment 1
[0033] In this embodiment, the thermally activated delayed fluorescent molecule of the present invention includes an electron donor D and an electron acceptor A, and the electron acceptor A has a trimeric quinolinone group, wherein the structural composition of the thermally activated delayed fluorescent molecule is D n -A structure, n is a natural number. like figure 1 Shown is the fluorescence emission spectrum of the thermally activated delayed fluorescent molecule in this implementation.
[0034] The electron acceptor A has a trimeric quinolinone group. Since the trimeric quinolinone group has a hydroxyl structure, the thermally activated delayed fluorescent molecule has a super large plane, so that the thermally activated delayed fluorescent molecule has a high The intersystem crossing rate constant and the antiintersystem crossing rate constant can effectively suppress the reduction of the radiative transition rate due to the energy gap rule, thereby obtaining a high ph...
Embodiment 2
[0048] The electrothermally activated delayed fluorescent device of the present invention adopts the thermally activated delayed fluorescent molecular material in Example 1, and the thermally activated delayed fluorescent molecular material is characterized by high efficiency, weak roll-off, and long wavelength. Delayed fluorescence devices have the characteristics of high efficiency, long life, and high precision.
[0049] Specifically, such as figure 2 As shown, in this embodiment, the electrothermally activated delayed fluorescent device 1 includes a substrate 10 , an injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 , and a cathode layer 60 . Wherein, the substrate 10 is a glass layer provided with a conductive thin film 11 .
[0050] The injection layer 20 is provided on the substrate 10, and its material is 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzo Fei.
[0051] The hole transport layer 30 is disposed ...
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