Green light thermal activation delayed fluorescence material, synthetic method thereof, electroluminescent device

A technology of thermally activated delayed and fluorescent materials, applied in luminescent materials, electro-solid devices, chemical instruments and methods, etc., can solve the problems of low photoluminescence quantum yield, low proportion of thermally activated delayed fluorescent materials, etc. The effect of high luminescence quantum yield, low singlet triplet energy level difference, and high luminous efficiency

Inactive Publication Date: 2019-03-22
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a green light thermally activated delayed fluorescent material and its synthesis method, and an electroluminescent device to solve the problem of low photoluminescence quantum yield in the thermally activated delayed fluorescent material system in the prior art , Technical issues such as the low proportion of thermally activated delayed fluorescent materials in the entire thermally activated delayed fluorescent material system

Method used

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  • Green light thermal activation delayed fluorescence material, synthetic method thereof, electroluminescent device
  • Green light thermal activation delayed fluorescence material, synthetic method thereof, electroluminescent device
  • Green light thermal activation delayed fluorescence material, synthetic method thereof, electroluminescent device

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Embodiment 1

[0040] This embodiment provides a green thermally activated delayed fluorescent material, which is a target compound synthesized by the reaction of an electron donor and an electron acceptor. The target compound has a molecular structure of D-A, and in the molecular structure of D-A, D is an electron donor body, A is an electron acceptor, and there are fluorine-containing groups and bromine-containing groups on the electron acceptor, and the electron acceptor is a planar electron acceptor with an ultra-low triplet energy level, and the triplet state of the target compound The energy level range is 1.0-2.0eV. In this embodiment, the electron donor is phenoxazine, and the molecular structure of the electron acceptor is

[0041]

[0042] The molecular structure of the first target compound synthesized by the electron donor and the electron acceptor is as follows:

[0043]

[0044] In this embodiment, through ingenious molecular design, a compound with lower single triplet ...

Embodiment 2

[0067] This embodiment provides a green thermally activated delayed fluorescent material, which is a target compound synthesized by the reaction of an electron donor and an electron acceptor. The target compound has a molecular structure of D-A, and in the molecular structure of D-A, D is an electron donor body, A is an electron acceptor, and there are fluorine-containing groups and bromine-containing groups on the electron acceptor, and the electron acceptor is a planar electron acceptor with an ultra-low triplet energy level, and the triplet state of the target compound The energy level range is 1.0-2.0eV. In this embodiment, the electron donor is phenoxazine, and the molecular structure of the electron acceptor is

[0068]

[0069] The molecular structure of the second target compound synthesized by the electron donor and the electron acceptor is as follows:

[0070]

[0071] In this embodiment, through ingenious molecular design, a compound with lower single triplet...

Embodiment 3

[0094] This embodiment provides a green thermally activated delayed fluorescent material, which is a target compound synthesized by the reaction of an electron donor and an electron acceptor. The target compound has a molecular structure of D-A, and in the molecular structure of D-A, D is an electron donor body, A is an electron acceptor, and there are fluorine-containing groups and bromine-containing groups on the electron acceptor, and the electron acceptor is a planar electron acceptor with an ultra-low triplet energy level, and the triplet state of the target compound The energy level range is 1.0-2.0eV. In this embodiment, the electron donor is phenoxazine, and the molecular structure of the electron acceptor is

[0095]

[0096] The molecular structure of the third target compound synthesized by the electron donor and the electron acceptor is as follows:

[0097]

[0098] In this embodiment, through ingenious molecular design, a compound with lower single triplet ...

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Abstract

The invention provides a green light thermal activation delayed fluorescence material, a synthetic method thereof, and an electroluminescent device. The green light thermal activation delayed fluorescence material is a target compound synthesized by a reaction of an electron donor and an electron acceptor. The target compound is of a D-A molecular structure. The electron acceptor has a fluorine-containing group and a bromine-containing group. The electron acceptor is a planar electron acceptor in an ultralow triplet state energy level. A range of the triplet state energy level of the target compound is 1.0-2.0 eV. The synthetic method for the green light thermal activation delayed fluorescence material comprises the following steps: a step of preparing reaction liquid; a step of synthesizing the target compound; a step of extracting; and a step of purifying the target compound. The electroluminescent device comprises a substrate layer, a hole injection layer, a transmission layer, a luminous layer, an electron transmission layer and a cathode layer. The method is capable of improving luminous efficiency of the material, and realizing high-efficiency preparation of the electroluminescent device.

Description

technical field [0001] The invention relates to the display field, in particular to a green light thermally activated delayed fluorescent material, a synthesis method thereof, and an electroluminescent device. Background technique [0002] Organic light-emitting diodes (organic light-emitting diodes, OLEDs) do not need a backlight source for their active light emission, high luminous efficiency, large viewing angle, fast response speed, wide temperature range, relatively simple production and processing technology, and low driving voltage. , low energy consumption, lighter and thinner, flexible display and other advantages, as well as huge application prospects, have attracted the attention of many researchers. In OLEDs, the dominant light-emitting guest material is crucial. The luminescent guest material used in early OLEDs is fluorescent materials. Since the ratio of singlet and triplet excitons in OLEDs is 1:3, the internal quantum efficiency (IQE) of OLEDs based on fluo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D265/38C07D413/04C09K11/06H01L51/54
CPCC09K11/06C07D265/38C07D413/04C09K2211/1029C09K2211/1011C09K2211/1033H10K85/615H10K85/657H10K85/6572H10K50/11C09K2211/1018H10K71/00H10K71/164H10K2102/351
Inventor 罗佳佳
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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