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Deep red photothermally activated delayed fluorescence material as well as preparation method thereof and electroluminescent devices

A technology of thermal activation delay and fluorescent materials, applied in the direction of luminescent materials, electric solid devices, chemical instruments and methods, etc., can solve the problem of inability to obtain device performance

Inactive Publication Date: 2019-07-16
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, green and sky blue TADF materials have achieved an external quantum efficiency (EQE) of more than 30%; however, red and deep red TADF materials cannot obtain excellent device performance due to the energy gap law.

Method used

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  • Deep red photothermally activated delayed fluorescence material as well as preparation method thereof and electroluminescent devices
  • Deep red photothermally activated delayed fluorescence material as well as preparation method thereof and electroluminescent devices
  • Deep red photothermally activated delayed fluorescence material as well as preparation method thereof and electroluminescent devices

Examples

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preparation example Construction

[0044] see figure 1 , figure 1 It is a flowchart of a preparation method of a deep red photothermally activated delayed fluorescence (TADF) material according to an embodiment of the present invention. Such as figure 1 As shown, the embodiment of the present invention also provides a preparation method of a deep red photothermally activated delayed fluorescence (TADF) material, comprising the following steps:

[0045] Step S10, adding compound A-X and compound D-B(OH)2 into the alkali-containing solution, wherein X is halogen, and A has any one of the following structural formulas:

[0046]

[0047] The D is any one of the following structural formulas:

[0048]

[0049] Step S20, under an inert gas, add a palladium catalyst to the solution, and react at a first temperature for a first time to obtain a reaction solution;

[0050] Step S30, cooling the reaction solution to a second temperature to obtain a mixture; and

[0051] Step S40, separating the deep red photot...

Embodiment 1

[0060] In specific example 1 of the present invention, the target deep red photothermally activated delayed fluorescence (TADF) material to be synthesized includes compound 1 of the following structural formula 2:

[0061]

[0062] The synthetic route of compound 1 of structural formula 2 is shown in following reaction formula 1:

[0063]

[0064] The detailed synthetic steps of compound 1 are as follows:

[0065] 2-Bromotetracene-5,12-dione (3.36 g, 10 mmol), 4-(diphenylamino)-phenylboronic acid (3.18 g, 11 mmol), 30 mL of toluene and 10 mL of 2.5 M aqueous potassium carbonate Added to a 100mL Schlenk (Schlenk) bottle, and evacuated with argon. Then tetrakistriphenylphosphopalladium (0.48g, 0.4mmol) was added, and the reaction was refluxed at 80°C for 24h. After cooling to room temperature, the reaction solution was extracted three times with DCM, washed three times with water, dried over anhydrous sodium sulfate, filtered, and spin-dried. Column chromatography was p...

Embodiment 2

[0067] In specific example 2 of the present invention, the target deep red photothermally activated delayed fluorescence (TADF) material to be synthesized includes compound 2 of the following structural formula 3:

[0068]

[0069] The synthetic route of compound 2 of structural formula 3 is shown in following reaction formula 2:

[0070]

[0071] The detailed synthetic steps of compound 2 are as follows:

[0072] 2-Bromopentacene-5,7,12,14-tetraketone (4.16g, 10mmol), 4-(diphenylamino)-phenylboronic acid (3.18g, 11mmol), 30mL of toluene and 10mL of 2.5 M Potassium carbonate aqueous solution was added to a 100 mL Schlenk bottle, and argon gas was used for gas exchange. Then tetrakistriphenylphosphopalladium (0.48g, 0.4mmol) was added, and the reaction was refluxed at 80°C for 24h. After cooling to room temperature, the reaction solution was extracted three times with DCM, washed three times with water, dried over anhydrous sodium sulfate, filtered, and spin-dried. Col...

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Abstract

The invention provides a deep red photothermally activated delayed fluorescence material as well as a preparation method thereof and electroluminescent devices. The deep red photothermally activated delayed fluorescence (TADF) material comprises a compound composed of a receptor A and a donor D, and the compound has a following structural general formula represented by a formula 1 shown in the description: D-A, wherein in the formula 1, the receptor A is any one selected from structural formulae shown in the description, and the donor D is any one selected from structural formulae shown in thedescription.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a deep red photothermally activated delayed fluorescence (thermally activated delayed fluorescence, TADF) material, a preparation method thereof, and an electroluminescence device. Background technique [0002] Organic light-emitting diodes (organic light-emitting diodes, OLED) display device does not need a backlight source for its active light emission, high luminous efficiency, large viewing angle, fast response speed, wide temperature range, relatively simple production and processing technology, and easy to drive. The advantages of low voltage, low energy consumption, lighter and thinner, flexible display and huge application prospects have attracted the attention of many researchers. [0003] Existing OLED display devices generally include: a substrate, an anode disposed on the substrate, an organic light-emitting layer disposed on the anode, an electron transport layer di...

Claims

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Application Information

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IPC IPC(8): C07C225/24C07C221/00C09K11/06H01L51/50H01L51/54
CPCC07C225/24C07C221/00C09K11/06C09K2211/1007C09K2211/1011C09K2211/1014H10K85/623H10K85/622H10K85/631H10K50/15H10K50/16H10K50/00
Inventor 王彦杰
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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