Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electroluminescent material, preparation method of electroluminescent material and light-emitting device

An electroluminescent material and light-emitting layer technology, applied in the field of lighting, can solve problems such as low efficiency, and achieve the effects of high efficiency, small first single-triplet energy level difference, increased rigidity and electron-absorbing ability

Inactive Publication Date: 2019-09-10
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the prior art, organic light emitting diodes (Organic Light Emitting Diode) have self-luminous properties, and the materials that dominate their light emission are mainly electroluminescent materials. However, the current electroluminescent materials that emit red light have low efficiency. Therefore, It is necessary to provide an electroluminescent material with high efficiency and capable of emitting deep red light, a preparation method of the electroluminescent material and a light-emitting device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electroluminescent material, preparation method of electroluminescent material and light-emitting device
  • Electroluminescent material, preparation method of electroluminescent material and light-emitting device
  • Electroluminescent material, preparation method of electroluminescent material and light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The following will clearly and completely describe the technical solution in the application with reference to the accompanying drawings in the implementation manner of the application. Apparently, the described implementations are only some of the implementations of this application, not all of them. Based on the implementation manners in this application, all other implementation manners obtained by those skilled in the art without creative efforts shall fall within the scope of protection of this application.

[0035] The application provides an electroluminescence material. The structural formula of the electroluminescent material is: R 2 -R 1 -R 2 . The R 1 The structural formula is One of. The R 2 The structural formula is One of.

[0036] The electroluminescent material is a deep red photothermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence, TADF) material. by the R 1 and the R 2 permutations and combinations, the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application provides an electroluminescent material, a preparation method of the electroluminescent material and a light-emitting device. The electroluminescent material is formed by reacting a first reactant with a second reactant to form a first intermediate product and reacting the first intermediate product with a third reactant, a phenanthrene ring electron acceptor of the electroluminescent material comprises two nitrogen atoms, so that rigidity and electron-withdrawing ability of the electron acceptor can be increased, speeds of intersystem crossing and reverse intersystem crossing are increased, an overlap degree between a highest occupied molecular orbital and a lowest unoccupied molecular orbital of a molecule is reduced, and a small first single and triplet state energy level difference and a high photoluminescence quantum yield are obtained. According to the electroluminescent material, the preparation method of the electroluminescent material and the light-emitting device provided by the invention, the electroluminescent material has high efficiency and can emit deep red light.

Description

technical field [0001] The present application relates to the lighting field, in particular to an electroluminescent material, a preparation method of the electroluminescent material and a light emitting device. Background technique [0002] In the prior art, organic light emitting diodes (Organic Light Emitting Diode) have self-luminous properties, and the materials that dominate their light emission are mainly electroluminescent materials. However, the current electroluminescent materials that emit red light have low efficiency. Therefore, It is necessary to provide an electroluminescent material capable of emitting deep red light with high efficiency, a preparation method of the electroluminescent material and a light emitting device. Contents of the invention [0003] The application provides an electroluminescent material, a preparation method of the electroluminescent material and a light-emitting device, so as to realize the electroluminescent material and device wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06C07D471/14H01L51/50H01L51/54
CPCC09K11/06C07D471/14C09K2211/1007C09K2211/1014C09K2211/1029C09K2211/1044H10K85/6572H10K50/11
Inventor 王彦杰
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com