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The structure of the ion source in the ion implanter

An ion implantation and machine technology, which is applied to circuits, discharge tubes, electrical components, etc., can solve problems such as machine shutdown, and achieve the effect of extending service life and solving abnormal shutdown problems.

Active Publication Date: 2022-05-27
SHANGHAI HUALI INTEGRATED CIRCUIT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention is to provide a structure of the ion source in the ion implantation machine, which can solve the problem of machine shutdown caused by peeling of the reflector and the pure tungsten small baffle in the existing ion source

Method used

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  • The structure of the ion source in the ion implanter
  • The structure of the ion source in the ion implanter
  • The structure of the ion source in the ion implanter

Examples

Experimental program
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Embodiment 1

[0033] In the present embodiment, the structure of the ion source in the ion implantation machine, comprising an arc chamber, a reflector 103 and a pure tungsten baffle 107, the arc starting chamber comprises a graphite end plate 1041 and a graphite cavity body, the graphite end plate is formed with a groove, the graphite chamber body is pressed in the pure tungsten small baffle and the graphite end plate, as shown Figure 4 As shown, the pure tungsten baffle 107 and the graphite end plate 1041 is provided with a first insulating baffle 108, the pure tungsten baffle 107 and the graphite cavity body near the end of the graphite end plate 1041 is provided with a second insulating baffle 109, the first insulating baffle 108 and the second insulating baffle 109 are formed at the center of the terminal part for the reflector 103 through the through hole.

[0034] In the existing ion source structure, the pure tungsten small baffle 107 is directly installed in the groove of the graphite ...

Embodiment 2

[0038] On the basis of Example I, the present embodiment further illustrates the structure of the first insulating baffle and the second insulating baffle.

[0039] as Figure 4 As shown, the first insulating baffle 108 is embedded in the groove of the graphite end plate 1041, and the first insulating baffle 108 forms a groove containing the pure tungsten small baffle 107.

[0040] Further, the first insulating baffle comprises a top plate, a bottom plate, a front side plate, a rear side plate and a left plate, the top plate, the bottom plate, the front side plate and the rear side plate are perpendicular to the left plate, the left plate and the top plate, the bottom plate, the front side plate and the rear side plate enclosed in a groove containing the pure tungsten small baffle.

[0041] as Figure 4 As shown, the front and rear panels of the first insulating baffle 108 further form a flap with outward extension, so as to facilitate the installation of the first insulating baffle...

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Abstract

The invention discloses a structure of an ion source in an ion implantation machine, which includes an arc starting chamber, a reflector and a small pure tungsten baffle, the arc starting chamber includes a graphite end plate and a graphite cavity main body, and the graphite end plate is formed with Groove, the main body of the graphite cavity is press-fitted on the small pure tungsten baffle plate and the graphite end plate, and a through hole is formed at the center of the graphite end plate and the small pure tungsten baffle plate, the A first insulating baffle is provided between the small pure tungsten baffle and the graphite end plate, and a second insulating baffle is provided between the small pure tungsten baffle and the end of the graphite cavity main body close to the graphite end plate. The baffle, the center of the first insulating baffle and the second insulating baffle is formed with a through hole for the terminal part of the reflector to pass through. The invention can effectively solve the problem of the conduction between the reflector and the small pure tungsten baffle when peeling occurs, thereby prolonging the service life of the ion source and the maintenance cycle of the machine.

Description

Technical field [0001] The present invention relates to the field of microelectronics and semiconductor integrated circuit manufacturing, in particular belonging to an ion implantation machine (VIISta Trident machine) structure of the ion source. Background [0002] At present, the VIISta Trident machine is mainly used for the process of high-intensity injection conditions in the implantation process, and the machine is mainly divided into three parts: ion source, beam part, target chamber and terminal table. An ion source is where ions are produced, usually using electrons to strike gas molecules or atoms to produce ions. The ion source is mainly composed of four parts, namely the gas tank, the source head, the high-pressure suction electrode and the ion source chamber (source chamber), of which the ion source includes the arc chamber ,Arc chamber), evaporator, filament (filament) and reflector (Repeler), the filament, cathode and reflector are installed in the arc chamber. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317H01J37/08
CPCH01J37/3171H01J37/08
Inventor 谢石谦丁杰何春雷
Owner SHANGHAI HUALI INTEGRATED CIRCUIT CORP