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Diode with current sensor

A technology of power electronics and diodes, applied in the field of diodes and power electronics systems, can solve problems such as damage

Inactive Publication Date: 2020-04-28
SEMICON COMPONENTS IND LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fault conditions can result in damage if not detected accurately and mitigated quickly (eg, 1-10 microseconds)

Method used

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  • Diode with current sensor
  • Diode with current sensor
  • Diode with current sensor

Examples

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Embodiment Construction

[0018] The present disclosure describes diodes configured with conductive pads (ie, channel stop pads) on a channel stop region of a substrate. The sense resistor (R 感测 ) can be coupled to the diode between its channel stop pad and cathode pad such that current is sensed when the diode is forward biased (I 感测 ) flows through the sense resistor. Then, by measuring I 感测 (or sense voltage V 感测 ), the forward current through the diode can be estimated (I F ). Because the sense resistor is connected between the channel stop pad and the cathode pad (eg, ground), the voltage (and current) at the primary (PN) junction of the diode is relatively unaffected by the measurement. Therefore, over a wide range of operating conditions (eg, a wide range of I F range), I F estimates can be very accurate.

[0019] Figure 1A An example of a diode 100 with a current sensor according to an embodiment of the disclosure is shown graphically. The diode includes a substrate (e.g., silicon) do...

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PUM

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Abstract

A diode with a current sensor is disclosed. The diode includes an anode region, a cathode region, and a channel-stop region. The diode further includes a sense resistor that is connected between the channel-stop region and the cathode region. When the diode is forward biased, a sense current flows through the sense resistor that corresponds to the forward current flowing through the diode. When the diode is reverse biased, the channel-stop region helps prevent a breakdown condition in the diode.

Description

technical field [0001] The present disclosure relates to power electronics, and more particularly, to a diode and power electronics system. Background technique [0002] Power electronic devices may be susceptible to fault conditions (eg, overcurrent, short circuit, etc.). If fault conditions are not detected accurately and mitigated quickly (eg, 1-10 microseconds), damage may result. Therefore, new devices and techniques are needed to sense conditions in power electronics. Contents of the invention [0003] In one general aspect, this disclosure describes diodes. The diode includes a substrate. A cathode pad is disposed on the bottom surface of the substrate. An anode pad is disposed on a first portion of the top surface (ie, opposite the bottom surface) of the substrate, and a channel stop pad is disposed on a second portion of the top surface. The diode also includes a sense resistor connected between the channel stop pad and the cathode pad. The sense resistor is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861G01R19/165G01R31/26
CPCG01R19/16571G01R31/2632H01L29/861G01R1/20G01R19/0092G05F1/573H01L27/0248H01L29/0619H01L29/8611H03K17/0814H03K2217/0027G01R15/146H01L29/7397H03K17/14
Inventor 曾祥吴小利王颢托马斯·奈尔张浩铁宋星圭
Owner SEMICON COMPONENTS IND LLC