Conformal halogen doping in 3D structures using conformal dopant film deposition

Abstract

Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In some embodiments, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film include halogen atoms. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

Description

technical field [0001] Embodiments described herein generally relate to the doping of three-dimensional (3D) structures formed on a substrate. More specifically, embodiments described herein relate to conformal doping in 3D silicon structures using a conformal dopant deposition process. Background technique [0002] Three-dimensional (3D) transistors such as Fin Field Effect Transistors (FinFETs) are expected to scale up Complementary Metal Oxide Semiconductors (CMOS). Such FinFET transistors generally provide improved electrostatic control (ie, short channel effects) and lower sensitivity to random dopant fluctuations. However, there are implementation challenges and process complexity issues in the integration of FinFETs with advanced technology dimensions. [0003] For example, one challenge of FinFET integration is dopant concentration in 3D silicon-containing device structures. Due to the lack of body or back gate bias in a fully depleted (ie, no mobile carriers) Fin...

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Problems solved by technology

However, previous attempts to dope fluorine by ion implantation have shown that damage to FinFET fins occurs, and this process may not be effective at introducing fluorine uniformly across the 3D geometry of the FinFET fin.

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