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A silicon carbide infrared radiation ceramic material and its preparation method

A technology for infrared radiation and ceramic materials, applied in the field of silicon carbide ceramic materials and their preparation, silicon carbide infrared radiation ceramic materials and their preparation fields, can solve problems such as differences, achieve wide application prospects, and reduce costs.

Active Publication Date: 2021-08-31
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First, its emissivity is tested under high temperature conditions. The higher the test temperature, the greater the emissivity of the material, and there is a big difference

Method used

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  • A silicon carbide infrared radiation ceramic material and its preparation method
  • A silicon carbide infrared radiation ceramic material and its preparation method
  • A silicon carbide infrared radiation ceramic material and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Take 200g of 100wt% β-SiC, 0wt% AlN, 4g of phenolic resin, use a certain grade of SiC balls as the ball milling medium, add absolute ethanol as the solvent, dry and sieve after ball milling for 12 hours, and obtain the raw material powder;

[0050] The obtained raw material powder is placed in an atmospheric pressure sintering furnace, and a solid solution reaction is carried out under an argon atmosphere, the temperature is controlled at 2000° C., and the holding time is 3 hours to obtain a SiC powder;

[0051] Take 90g of the above SiC powder, add 10g of the above obtained MgO-Al 2 o 3 -SiO 2Auxiliary, add 2g of phenolic resin, use a certain grade of SiC balls as the ball milling medium, add absolute ethanol as the solvent, dry and sieve after ball milling for 12 hours, and form the obtained powder on a manual hydraulic press with a pressure of 8MPa, and then press it at 200MPa The pressure is isostatically pressed to obtain the green body;

[0052] After vacuum de...

Embodiment 2

[0055] Take 200g of 96wt% β-SiC, 4wt% AlN, 4g of phenolic resin, use a certain grade of SiC balls as the ball milling medium, add absolute ethanol as the solvent, dry and sieve after ball milling for 12 hours, and obtain the raw material powder;

[0056] The obtained raw material powder is placed in an atmospheric pressure sintering furnace, and a solid solution reaction is carried out under an argon atmosphere, the temperature is controlled at 2000° C., and the holding time is 3 hours to obtain a SiC-AlN solid solution powder;

[0057] Take 90g of the above-mentioned SiC-AlN solid solution powder, add 10g of the above-mentioned MgO-Al 2 o 3 -SiO 2 Auxiliary, add 2g of phenolic resin, use a certain grade of SiC balls as the ball milling medium, add absolute ethanol as the solvent, dry and sieve after ball milling for 12 hours, and form the obtained powder on a manual hydraulic press with a pressure of 8MPa, and then press it at 200MPa Cold isostatic pressing under pressure t...

Embodiment 3

[0061] Take 200g of 100wt% β-SiC, 0wt% AlN, 4g of phenolic resin, use a certain grade of SiC balls as the ball milling medium, add absolute ethanol as the solvent, dry and sieve after ball milling for 12 hours, and obtain the raw material powder;

[0062] The obtained raw material powder is placed in an atmospheric pressure sintering furnace, and a solid solution reaction is carried out under an argon atmosphere, the temperature is controlled at 2000° C., and the holding time is 3 hours to obtain a SiC powder;

[0063] Take 90g of the above SiC powder, add 10g of the above obtained MgO-Al 2 o 3 -SiO 2 Auxiliary, add 2g of phenolic resin, use a certain grade of SiC balls as the ball milling medium, add absolute ethanol as the solvent, dry and sieve after ball milling for 12 hours, and form the obtained powder on a manual hydraulic press with a pressure of 8MPa, and then press it at 200MPa Cold isostatic pressing under pressure to obtain green body;

[0064] After vacuum debo...

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Abstract

The invention relates to a silicon carbide infrared radiation ceramic material and a preparation method thereof. The raw material composition of the silicon carbide infrared radiation ceramic material includes: β ‑SiC and MgO‑Al 2 o 3 ‑SiO2 2 Additives; preferably include: 76.5-95wt% β-SiC, 0-8.5wt% AlN, 5-15wt% MgO-Al 2 o 3 ‑SiO2 2 Additives, the sum of the contents of each component is 100wt%.

Description

technical field [0001] The invention relates to a silicon carbide infrared radiation ceramic material and a preparation method thereof, in particular to a silicon carbide ceramic material with high infrared emissivity and a preparation method thereof, belonging to the field of infrared radiation ceramics. Background technique [0002] Infrared radiation ceramic materials refer to inorganic materials with high emissivity or characteristic emissivity in the infrared band, and are important functional materials. Infrared radiation ceramic materials have the characteristics of excellent infrared radiation performance, chemical stability and high temperature stability, and can be widely used in infrared light sources, infrared heaters, thermal photovoltaic radiators, spacecraft thermal control coatings, and spaceborne microwave calibration sources , nuclear fusion calibration source, LED heat dissipation substrate and other fields. [0003] For example: In a high temperature fur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B35/622
CPCC04B35/565C04B35/622C04B2235/3865C04B2235/602C04B2235/656C04B2235/6567C04B2235/658C04B2235/6581C04B2235/77C04B2235/96
Inventor 陈健祝明黄政仁朱云洲姚秀敏陈忠明刘学建
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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