Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel high-silicon aluminum alloy electronic packaging material and preparation method thereof

An electronic packaging material, high silicon aluminum alloy technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of rising circuit operating temperature, increased component failure rate, increased heat generation rate, etc., to improve thermal conductivity. , The effect of improving thermal stability and low thermal expansion coefficient

Inactive Publication Date: 2013-03-20
CHANGSHA HUAXI METAL MATERIAL
View PDF4 Cites 34 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The improvement of chip integration will inevitably lead to an increase in its heat generation rate, which will cause the operating temperature of the circuit to rise continuously, resulting in an increase in the failure rate of components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1) Ingot preparation

[0022] The alloying elements are formulated according to the following proportions, Si: 12%, Fe: 0.3%, Mn: 0.3%, Mg: 0.3% and the balance is industrial pure aluminum. The ingredients are smelted in an intermediate frequency induction furnace, heated to 750°C, and fully stirred , use flux (30%NaCl+47%KCl+23% cryolite) to cover slagging, and use hexachloroethane (C 2 Cl 6 ) for degassing. The metal droplets are injected into the spray deposition device through the nozzle, and the metal droplets atomized by high-pressure nitrogen gas are directly sprayed onto the substrate about 200mm away from the nozzle. The spray deposition process parameters are attached in Table 1.

[0023] Table 1 Spray deposition process parameters

[0024] Melting temperature (℃) Nozzle aperture(mm) atomizing gas Gas pressure (MPa) Deposition distance (mm) Substrate rotation speed (r.min －1 ) Atomization cone angle (°) 750 3.0 N 2 0.8 200 2...

Embodiment 2

[0032] 1) Ingot preparation

[0033] The alloying elements are formulated according to the following proportions, Si: 20%, Fe: 0.4%, Mn: 0.35%, Mg: 0.3%, and the balance is industrial pure aluminum. The ingredients are smelted in an intermediate frequency induction furnace, heated to 950°C, and fully stirred , use flux (30%NaCl+47%KCl+23% cryolite) to cover slagging, and use hexachloroethane (C 2 Cl 6 ) for degassing. The metal droplets are injected into the spray deposition device through the nozzle, and the metal droplets atomized by high-pressure nitrogen gas are directly sprayed onto the substrate about 250mm away from the nozzle. The spray deposition process parameters are attached in Table 1.

[0034] Table 1 Spray deposition process parameters

[0035] Melting temperature (℃) Nozzle aperture(mm) atomizing gas Gas pressure (MPa) Deposition distance (mm) Substrate rotation speed (r.min －1 ) Atomization cone angle (°) 950 3.0 N 2 0.8 250 ...

Embodiment 3

[0043] 1) Ingot preparation

[0044] The alloying elements are formulated according to the following proportions, Si: 26%, Fe: 0.45%, Mn: 0.40%, Mg: 0.35%, and the balance is industrial pure aluminum. The ingredients are smelted in an intermediate frequency induction furnace, heated to 1050°C, and fully stirred , use flux (30%NaCl+47%KCl+23% cryolite) to cover slagging, and use hexachloroethane (C 2 Cl 6) for degassing. The metal droplets are injected into the spray deposition device through the nozzle, and the metal droplets atomized by high-pressure nitrogen gas are directly sprayed onto the substrate about 300mm away from the nozzle. The spray deposition process parameters are attached in Table 1.

[0045] Table 1 Spray deposition process parameters

[0046] Melting temperature (℃) Nozzle aperture(mm) atomizing gas Gas pressure (MPa) Deposition distance (mm) Substrate rotation speed (r.min －1 ) Atomization cone angle (°) 1050 3.5 N 2 0.8 3...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
flexural strengthaaaaaaaaaa
Login to View More

Abstract

A novel high-silicon aluminum alloy electronic packaging material and a preparation method thereof. The alloy of the present invention consists of the following ingredients, in percentage by mass: 12-40% of Si, 0.3-0.6% of Fe, 0.3-0.45% of Mn, 0.3 to 0.5% of Mg, and the balance being industrial pure aluminum. Spray deposition is used to prepare ingots; and then a plurality times of small deformation thermal densification are carried out for the ingots after annealing for elimination of thermal stress, to prevent cracking of the alloy during processing, thereby enhancing the density of the material. The alloy of the present invention has the characteristics of high strength, low coefficient of expansion, high thermal conductivity and good air tightness.

Description

technical field [0001] The invention relates to an Al-Si-Fe-Mn-Mg alloy used for electronic packaging and a preparation method thereof, in particular to a preparation process of a high-silicon aluminum alloy electronic packaging material. Background technique [0002] Since the first semiconductor integrated circuit came out in 1958, so far, the development of IC chip integration has basically followed the MOORE law. The improvement of chip integration will inevitably lead to the increase of its heating rate, which makes the operating temperature of the circuit rise continuously, which leads to the increase of component failure rate. At the same time, electronic packaging is also constantly developing in the direction of miniaturization, light weight and high-density assembly. Since the 1990s, various high-density packaging technologies, such as chip size packaging (CSP), multi-chip components ( The continuous emergence of MCM) and unipolar integrated components (SLIM) has ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C22C21/02C22C1/02H01L23/29H01L23/373
Inventor 杨伏良郭涵文
Owner CHANGSHA HUAXI METAL MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com