Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for avoiding minority carrier injection of field effect transistor and field effect transistor

A field-effect transistor and minority carrier technology, which is applied in the fields of electric solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve problems affecting the orderly arrangement of small molecules, difficult to apply, etc., and achieve improved ideality And the effect of reliability, reducing injection effect, and increasing electrode contact resistance

Active Publication Date: 2020-05-22
SUZHOU UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is often only applicable to polymer semiconductor systems, that is, the volume of impurity molecules is much smaller than that of polymer molecules, so it has little effect on carrier transport, and it is difficult to apply to organic small molecule semiconductor systems, because impurity molecules Comparable to the volume of small molecule semiconductors, it will inevitably affect the orderly arrangement of small molecules and form new carrier confinement centers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for avoiding minority carrier injection of field effect transistor and field effect transistor
  • Method for avoiding minority carrier injection of field effect transistor and field effect transistor
  • Method for avoiding minority carrier injection of field effect transistor and field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] The present invention provides a method for avoiding minority carrier injection of field effect transistors based on p-type narrow-bandgap organic small molecules, the method comprising the following steps: between the source electrode and the p-type narrow-bandgap organic small molecule layer, and between A p-type wide bandgap organic semiconductor is loaded between the drain electrode and the p-type narrow bandgap organic small molecule layer.

[0042] In the embodiment of the present invention, the p-type wide-bandgap organic semiconductor is loaded between the source electrode and the p-type narrow-bandgap organic small molecule layer, and between the drain electrode and the p-type narrow-bandgap organic small-molecule layer, thereby avoiding the problem from the source. Injection of minority carriers (electrons).

[0043] In order to verify the above-mentioned technical effect, the inventor of the present invention has done following control experiment:

[0044] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for avoiding minority carrier injection of a field effect transistor based on p-type narrow band gap organic small molecules and the field effect transistor. The methodcomprises the following step: loading p-type wide-band gap organic semiconductors between a source electrode and a p-type narrow-band gap organic small molecular layer and between a drain electrode and the p-type narrow-band gap organic small molecular layer. According to the embodiment of the invention, p-type wide-band gap organic semiconductors are loaded between the source electrode and the p-type narrow-band gap organic small molecular layer and between the drain electrode and the p-type narrow-band gap organic small molecular layer, so that injection of minority carriers (electrons) isavoided from the source.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for avoiding minority carrier injection of field effect transistors based on p-type narrow-bandgap organic small molecules and the field-effect transistor based on p-type narrow-bandgap organic small molecules. Background technique [0002] Organic field-effect transistors based on organic semiconductors as the active layer are considered to be the core components of next-generation flexible electronic devices due to their excellent solution preparation, flexibility and wearable characteristics. With advances in molecular design, material growth, and device fabrication, the performance of organic field-effect transistors has been greatly improved. Among them, the mobility of the p-type organic semiconductor, the most important parameter used to evaluate the performance index of organic field effect transistors, has reached and exceeded the standard of amorphous si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/10H01L51/40
CPCH10K71/00H10K10/46H10K10/80Y02E10/549
Inventor 揭建胜张秀娟张晓宏吴晓峰
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products