Method for avoiding minority carrier injection of field effect transistor and field effect transistor
A field-effect transistor and minority carrier technology, which is applied in the fields of electric solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve problems affecting the orderly arrangement of small molecules, difficult to apply, etc., and achieve improved ideality And the effect of reliability, reducing injection effect, and increasing electrode contact resistance
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[0041] The present invention provides a method for avoiding minority carrier injection of field effect transistors based on p-type narrow-bandgap organic small molecules, the method comprising the following steps: between the source electrode and the p-type narrow-bandgap organic small molecule layer, and between A p-type wide bandgap organic semiconductor is loaded between the drain electrode and the p-type narrow bandgap organic small molecule layer.
[0042] In the embodiment of the present invention, the p-type wide-bandgap organic semiconductor is loaded between the source electrode and the p-type narrow-bandgap organic small molecule layer, and between the drain electrode and the p-type narrow-bandgap organic small-molecule layer, thereby avoiding the problem from the source. Injection of minority carriers (electrons).
[0043] In order to verify the above-mentioned technical effect, the inventor of the present invention has done following control experiment:
[0044] ...
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