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A dual-node single-event flip-immune memory cell and latch

A single-event flipping and storage unit technology, applied in static memory, instruments, electrical components, etc., can solve the problem of low anti-SEU performance of dual nodes, and achieve the effect of increasing performance

Active Publication Date: 2021-10-01
HOHAI UNIV CHANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the defects of the existing technology and make up for the technical problem of the traditional standard DICE structure dual-node anti-SEU performance is low, the present invention provides a storage unit and a latch immune to dual-node single-event upset

Method used

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  • A dual-node single-event flip-immune memory cell and latch
  • A dual-node single-event flip-immune memory cell and latch
  • A dual-node single-event flip-immune memory cell and latch

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Embodiment Construction

[0048] The present invention will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0049] see figure 2 , the present invention provides a dual-node SEU immune storage unit, comprising a first branch, a second branch, a third branch, a fourth branch, a fifth branch, a sixth branch, a seventh branch and The eighth branch.

[0050] The storage unit also includes nodes X0, X1, X2, X3, Y0, Y1, Y2, and Y3; the node X0 is located in the first branch, the node X1 is located in the second branch, the node X2 is located in the third branch, and the node X3 is located in the fourth branch, node Y0 is located in the fifth branch, node Y1 is located in the sixth branch, node Y2 is located in the seventh branch, and node Y3 is located in the eighth branch.

[0051] The first branch is c...

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Abstract

The invention discloses a double-node single-event flip immune storage unit and a latch. The storage unit includes a power supply, eight branches and one node on each branch, and two PMOSs on each branch. tube and two NMOS tubes; each branch is connected to the gate of the PMOS tube and NMOS tube on other branches through a node, so that the first, third, fifth, and seventh branches are connected to the second, fourth, sixth, and eighth branches respectively. The second, fourth, sixth, and eighth branch roads are respectively connected with the first, third, fifth, and seventh branch roads. The latch also includes logic circuitry. Through this structure, when any two nodes are struck by high-energy particles and their logic values ​​change, the logic values ​​of other nodes will not change. At the same time, the NMOS will eliminate the logic changes of the nodes and restore the logic state of the storage unit.

Description

technical field [0001] The invention relates to a storage unit and a latch immune to double-node single-event flipping, and belongs to the technical field of anti-radiation circuit design. Background technique [0002] In some harsh electromagnetic and radiation environments, large-scale integrated circuits (ICs) exposed to cosmic rays will cause the logic state of the device to flip, that is, the original stored "0" becomes "1", or "1" becomes "0" ". This is called Single-Event Upsets (SEU). Due to the increasing complexity of satellites, high-performance microelectronic devices are widely used in satellite systems, and the harm of SEU is very serious. When it causes the logic confusion of the spacecraft control system, it may cause disastrous consequences. During previous strong solar storms, many satellites had anomalies and failures due to SEU. Typical of SEUs caused by the bombardment of energetic particles in space, SEUs have become the most common error in onboard ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C5/00H03K19/003
CPCG11C5/005H03K19/00338
Inventor 王海滨杨萱萱宋溢文贾静
Owner HOHAI UNIV CHANGZHOU