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Wafer processing method and wafer processing system

A technology for processing systems and wafers, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor device performance, and achieve good performance and good performance.

Pending Publication Date: 2020-06-05
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of this application is to provide a wafer processing method and a wafer processing system to solve the problem in the prior art that the IPA drying method introduces organic matter while removing watermarks, resulting in poor performance of the device

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  • Wafer processing method and wafer processing system
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Embodiment Construction

[0025] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0026] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0027] It will be understood that when an element such as a layer, film, region, or substrate is referred to as ...

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PUM

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Abstract

The invention provides a wafer processing method and a wafer processing system. The method comprises the following steps: carrying out wet processing on a wafer; and introducing inert gas into a spacewhere the wafer is located so as to prevent water on the wafer from being in contact with gas in the space; after performing wet processing on the wafer, introducing inert gas into the space where the wafer is located so as to reduce the density of oxygen in the space where the wafer is located while the oxygen in contact with the water on the wafer is less such that watermarks generated on the surface of the wafer are less. Only inert gas is introduced into the space where the wafer is located; the inert gas does not react with other substances in the space, no substance is left on the wafer, the problem that in the prior art, organic matter is introduced through an IPA drying method is avoided, normal operation of the subsequent process is guaranteed, it is guaranteed that the performance of a subsequently-formed structure is good, and therefore it is guaranteed that the device has good performance.

Description

technical field [0001] The present application relates to the semiconductor field, in particular, to a wafer processing method and a wafer processing system. Background technique [0002] Watermark (Watermark) has always been a problem in the wet process (Wet Process). In the case of poor hydrophobicity of the wafer, water on the surface of the wafer, silicon on the wafer, and oxygen in the air react quickly to easily produce watermark. The watermark will make the contact performance of the device poor and the resistance high. [0003] At present, the generation of watermarks is mainly reduced by the IPA drying method, which uses isopropanol and water to dissolve the moisture on the surface of the wafer quickly, thereby reducing the generation of watermarks. However, this method will introduce some organic matter (such as isopropanol) into the wafer, especially for wafers with deep holes, this problem is more serious, which will affect the uniformity and compactness of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67
CPCH01L21/02H01L21/67034H01L21/67115H01L21/67017H01L21/67253
Inventor 夏余平顾立勋徐融任德营
Owner YANGTZE MEMORY TECH CO LTD
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