A Double Barrier Schottky Diode

Abstract

The invention discloses a double-barrier Schottky diode, in which two Schottky contacts are closely fabricated on the same mesa (middle mesa) in a back-to-back manner, so as to obtain even symmetric C-V characteristics and Odd symmetric I‑V characteristics make it possible to output only odd harmonics but no even harmonics when making a frequency doubler, making it suitable for the production of high-order frequency multipliers. Moreover, the cathodes of the two Schottky contacts are connected through a buffer layer without ohmic contact, which reduces the series resistance of the device and helps to improve the frequency doubling efficiency. The invention has a simple structure and is fully compatible with common diode technology, helps to simplify the design of frequency multipliers, and has good practicability in the design of frequency multipliers in millimeter wave and terahertz frequency bands.

Description

technical field [0001] The invention relates to the technical field of frequency multiplier design, in particular to a double potential barrier Schottky diode. Background technique [0002] Terahertz frequencies are widely used in broadband communication, security imaging, radio astronomy, atmospheric observation and other fields. At present, the development and utilization of terahertz technology urgently needs efficient and stable room temperature terahertz sources. In recent years, with the development of transistor and MMIC technology, active frequency multipliers and amplifiers are moving towards submillimeter wave. However, the output power of active frequency multipliers and amplifiers drops off rapidly as frequency increases. [0003] As a double-terminal device, the Schottky diode is a mainstream device for applications such as power generation and signal detection in the terahertz band due to its simple structure and low parasitic parameters. For the design of f...

AI Technical Summary

Problems solved by technology

However, multiple frequency multipliers are often required for the transceiver front-end to achieve a frequency above 1THz, so it is necessary to develop high-order frequency multipliers (five frequency multipliers, seven frequency multipliers) to minimize the number of cascaded components, while the existing The method of connecting multiple diode cores in reverse series or in the same direction not only increases additional ohmic contact loss (one Schottky contact corresponds to one ohmic contact), but also does not have even symmetrical C-V characteristics, so it is difficult to apply to high Submultiplier

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