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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as unsatisfactory hole transport effects

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a quantum dot light-emitting diode and

Method used

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  • Quantum dot light-emitting diode and preparation method thereof

Examples

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Example Embodiment

[0024] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, such as figure 2 shown, including the following steps:

[0025] S01: Provide a base;

[0026] S02: dissolving hydrogenated graphdiyne in a solvent to obtain a hydrogenated graphdiyne solution;

[0027] S03: Depositing the hydrogenated graphdiyne solution on a substrate to obtain a hole transport layer.

[0028] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention uses the solution method to make the hydrogenated graphyne into the hole transport layer, which not only has a simple process and low cost, but also can improve the hole transport ability and hole-electron transport of the device balance, and finally improve the luminous efficiency of the device.

[0029] Further, in the above step S01: if the surface of the substrate is an anode (anode substrate), a hole transport l...

Example Embodiment

[0043] Example 1

[0044] Using graphyne nano-microsphere powder, DMSO solvent, and sodium hydroxide to prepare the hydrogenated graphyne hole transport layer as an example, a detailed introduction is given:

[0045] 1) Disperse the graphdiyne nano-microsphere powder in DMSO solvent (10mg / mL), and stir for a certain period of time under nitrogen bubbling;

[0046] 2) Dissolve a certain amount of phenylboronic acid (0.15mmol / mL) and sodium hydroxide (0.5mmol / mL) in a certain amount of DMSO solvent, and stir evenly under nitrogen bubbling;

[0047] 3) mixing the graphdiyne colloidal solution with phenylboronic acid lye, stirring under nitrogen bubbling, heating to 60 degrees Celsius, and stirring for 120 minutes;

[0048] 4) After centrifugation, dry the solid powder to obtain hydrogenated graphdiyne powder, which is dispersed in solvent or ink for subsequent film preparation;

[0049] 5) Depositing the hydrogenated graphyne material on the anode substrate to prepare a hydroge...

Example Embodiment

[0050] Example 2

[0051] Using graphyne nanorod powder, isopropanol solvent, and potassium hydroxide to prepare hydrogenated graphyne hole transport layer as an example is introduced in detail:

[0052] 1) Disperse graphdiyne nanorod powder in isopropanol solvent (10 mg / mL), and stir for a certain period of time under nitrogen bubbling;

[0053] 2) Dissolve a certain amount of phenylboronic acid (0.15mmol / mL) and potassium hydroxide (0.5mmol / mL) in a certain amount of isopropanol solvent, and stir evenly under nitrogen bubbling;

[0054] 3) mixing the graphdiyne colloidal solution with phenylboronic acid lye, stirring under nitrogen bubbling, heating to 60 degrees Celsius, and stirring for 120 minutes;

[0055] 4) After centrifugation, dry the solid powder to obtain hydrogenated graphdiyne powder, which is dispersed in solvent or ink for subsequent film preparation;

[0056] 5) Depositing the hydrogenated graphyne material on the anode substrate to prepare a hydrogenated gr...

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Abstract

The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprisesan anode, a cathode and a quantum dot light-emitting layer located between the anode and the cathode, wherein a hole transport layer is further arranged between the anode and the quantum dot light-emitting layer, and the hole transport layer is made of graphdiyne hydride. The graphdiyne hydride is used for the hole transport layer, has the characteristics of good hole transport performance and large forbidden band width, can improve the hole transport capability and hole-electron transport balance of the device, and finally improves the light emitting efficiency of the device.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) has the advantages of high color purity, high luminous efficiency, adjustable emission wavelength, solution processing and inkjet printing, and is expected to become a new generation of display technology. In QLED devices, the selection of electron transport layer and hole transport layer materials is as important as the quantum dot light-emitting layer material to the overall luminous efficiency of the device and the improvement of device life. [0003] At present, the transport performance of the hole transport layer material is generally much lower than that of the electron transport layer. The charge transport of the device is difficult to achieve balance. The electrons are easy to accumulate in the electron layer and even pas...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/15H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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