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Image sensor structure and manufacturing method

A technology of an image sensor and a manufacturing method, which is applied to semiconductor devices, electric solid-state devices, radiation control devices, etc., can solve problems such as image brightness and color shift, and achieve good light blocking effect.

Inactive Publication Date: 2020-07-17
上海微阱电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, these pixel units will also respond to light in dark light conditions, resulting in brightening and color casts at the edge of the image.

Method used

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  • Image sensor structure and manufacturing method

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Experimental program
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Embodiment 1

[0026] In the following specific embodiments of the present invention, please refer to figure 1 , figure 1 It is a structural schematic diagram of an image sensor in a preferred embodiment of the present invention. Such as figure 1 As shown, an image sensor structure of the present invention includes: a pixel area 10 located on a substrate (not shown) and a circuit area 20 located around the pixel area 10 .

[0027] Please refer to figure 1 . A first color filter layer 14 is provided on the surface of the pixel area 10 , and a second color filter layer 21 is provided on the surface of the circuit area 20 . The second color filter layer 21 is used as a light blocking layer for blocking light emitted by the circuit area 20 .

[0028] Wherein, the first color filter layer 14 is a single-layer filter layer 14 arranged according to color rules. For example, the first color filter layer 14 can be made up of the red filter layer 13, the green filter layer 11 and the blue filter...

Embodiment 2

[0031] Below through the specific implementation and in conjunction with the attached figure 1 , a method for fabricating an image sensor structure of the present invention will be described in detail.

[0032] A method for fabricating an image sensor structure of the present invention can be used to fabricate an image sensor structure in Embodiment 1, and may include the following steps:

[0033] Firstly, the conventional pixel region 10 and the circuit region 20 around the pixel region 10 are fabricated on a silicon substrate.

[0034] Then, a passivation layer is formed on the surfaces of the pixel area 10 and the circuit area 20 . Materials such as silicon nitride, silicon dioxide, etc. can be used to form the passivation layer.

[0035] Next, a first flat layer (PL) is formed by coating on the passivation layer to increase the adhesion between the substrate layer and the upper color filter layer (adhesive layer) 14, 21.

[0036] Then, the first color filter layer 14 an...

Embodiment 3

[0044] The difference between the third embodiment and the first embodiment is that in the image sensor structure in this embodiment, the color filter layer (first color filter layer 14) 14 is only provided on the surface of the pixel area 10, and the A color filter layer (second color filter layer 21) is not provided on the surface of the circuit area 20, but a black glue layer 22 is set on the surface of the circuit area 20 as a light-blocking layer for blocking the light from the circuit area 20. emitted light. Other structures of the image sensor in the third embodiment are the same as those in the first embodiment, and will not be repeated here.

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Abstract

The invention discloses an image sensor structure which comprises a pixel area located on a substrate and a circuit area located around the pixel area. A first color filter layer is arranged on the surface of the pixel area, and a second color filter layer or a black adhesive layer is arranged on the surface of the circuit area, wherein the first color filter layer is a single-layer filter layer,the second color filter layer is a multi-layer filter layer, and the second color filter layer or the black adhesive layer is used for blocking light emitted by the circuit area, so that the light emitting problem of the image sensor can be effectively improved. The invention further discloses a manufacturing method of the image sensor structure.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to an image sensor structure and a manufacturing method capable of preventing light interference. Background technique [0002] A CMOS image sensor chip (CIS) includes a pixel unit located in a pixel area and a circuit located in a non-pixel area. When light is irradiated on the image sensor chip, the circuits in the non-pixel area will also be irradiated by light like the pixel units in the pixel area. Especially at the edges of circuits such as charge pump circuits (Charge Pump) and analog / digital conversion circuits (ADC) arranged on the same layer as the pixel unit, when illuminated by light, they will emit light, and will make the closest to these circuits Dozens of pixel units also sense light. As a result, these pixel units will also respond to light in dark light conditions, resulting in brightening and color shifting at the edge of the image. Co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14645H01L27/14621H01L27/14685
Inventor 叶红波温建新
Owner 上海微阱电子科技有限公司