Patterned photoelectric substrate with high photoelectric property function, light emitting diode and manufacturing method thereof

Abstract

The invention provides a manufacturing method of a patterned photoelectric substrate with a high photoelectric property function. The manufacturing method comprises the following steps of providing asubstrate; etching the surface of the substrate to form a first patterned structure and a spacer region; forming two metal layers on the surfaces of the first patterned structure and the spacer region; forming one or both of a second patterned structure on the first patterned structure and over the spacer region; etching the second patterned structure to extend downwards to a part of the surface of the substrate; enabling the interval regions to form flat surfaces; removing the metal layer to form the substrate having a first patterned structure, a second patterned structure, and a flat spacerregion. In addition, the invention also provides the patterned photoelectric substrate with the high photoelectric property function manufactured by the method, and a light emitting diode with the substrate.

Description

technical field [0001] The present invention relates to a patterned optoelectronic substrate with high optoelectronic function and a manufacturing method thereof, in particular to a patterned optoelectronic substrate with a spacer region of a flat surface, and a light-emitting diode with the substrate, so as to improve dislocation defects and Electrical problems, and further strengthen the electrical function of light-emitting diodes. Background technique [0002] The historical development of human lighting has entered the era of solid-state lighting. Brighter luminous brightness, lower price, longer life, and higher stability are the common goals of the solid-state lighting industry. The lighting market attaches the most importance to the brightness requirements of LEDs. Generally speaking, the maximum light output (L max ) is mainly determined by the external quantum efficiency (η ext ) and maximum operating current (I max ) determined by L max = η ext ×I max , wher...

AI Technical Summary

Problems solved by technology

[0008] However, in the above-mentioned light-emitting diodes, the luminous efficiency of the light-emitting diodes is mainly improved by forming a nanoscale porous photonic crystal structure or micron-scale protruding particles on the substrate alone. There are still inherent limitations in the degree of dislocation density or the degree of enhanced optoelectronic functions

Images