Semiconductor plasma machine

Abstract

The invention relates to the technical field of plasma machines, and particularly relates to a semiconductor plasma machine. The semiconductor plasma machine comprises a plasma machine body, wherein the plasma machine body is provided with an etching bin, a vacuum pump is arranged on the upper surface of the plasma machine body, an exhaust pipe is arranged at the output end of the vacuum pump, a bin door is arranged on the etching bin, a hollow sealing gasket is arranged in the etching bin, a rectangular groove is formed in the front surface of the hollow sealing gasket, and a rectangular plugis arranged on the rear surface of the bin door. According to the semiconductor plasma machine, a stop block is rotated by using a rotating shaft after the bin door is closed, a limiting column is enabled to slide into the other end of the arc-shaped groove from one end of the arc-shaped groove, the bin door is buckled and pressed at the opening position of the etching bin by the limiting columnso as to close the bin door, the rectangular plug is matched with the hollow sealing gasket in an inserted mode through the rectangular groove at the same time, the sealing effect of the connecting position of the bin door and the etching bin is improved, oxidizing gas in air is prevented from entering the etching bin, the uniformity of semiconductor surface etching is improved, and the problem that the sealing effect of the semiconductor plasma machine is poor is solved.

Description

technical field [0001] The invention relates to the technical field of plasma machines, in particular to a semiconductor plasma machine. Background technique [0002] Semiconductor plasma machine is also called plasma etching machine. Plasma etching is the most common form of dry etching. Its principle is that the gas exposed to the electron area forms a plasma, and the resulting ionized gas and release of high-energy electrons Composed of gases, which form a plasma or ions, the ionized gas atoms, when accelerated by an electric field, release sufficient force with surface repelling forces to tightly bond materials or etch surfaces. [0003] At present, the semiconductor plasma machine needs to be etched in a vacuum environment, but the sealing effect of the existing plasma machine is poor, so that the oxidizing gas in the air enters the plasma machine, resulting in uneven etching of the semiconductor surface, which is not easy to use. In view of this, we propose a semicond...

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Problems solved by technology

[0004] The object of the present invention is to provide a semiconductor plasma machine to solve the problem of poor sealing effect of the semiconductor plasma machine proposed in the above-mentioned background technology

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