Driving circuit of depletion type transistor

A technology of depletion-mode transistors and driving circuits, applied in electrical components, output power conversion devices, etc., to solve problems such as switching speed limitations

Active Publication Date: 2020-07-31
SHENZHEN XINER SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] An embodiment of the present invention provides a driving circuit for a depletion-mode transistor to solve the problem of switching speed limitation in the process of using a low-voltage MOS tube to drive a depletion-mode transistor

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  • Driving circuit of depletion type transistor
  • Driving circuit of depletion type transistor
  • Driving circuit of depletion type transistor

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0025] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and like reference numer...

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Abstract

The invention discloses a driving circuit of a depletion type transistor. The circuit comprises: a low-voltage MOS transistor, wherein the drain electrode of the low-voltage MOS transistor is connected with the source electrode of a depletion type transistor, and the source electrode of the low-voltage MOS transistor is grounded; and a direct drive circuit and an indirect locking circuit, whereinthe indirect locking circuit is connected with a power supply end and the grid electrode of the low-voltage MOS transistor and used for driving the low-voltage MOS transistor to be opened, locking thelow-voltage MOS transistor to be in a normally open state after the depletion type transistor is opened for the first time, and driving the low-voltage MOS transistor to be closed and locking the depletion type transistor to be in a closed state after the depletion type transistor is temporarily closed, the direct drive circuit is connected with the power supply end, the grid electrode of the depletion type transistor and the source electrode of the low-voltage MOS transistor and used for directly driving the depletion type transistor to be opened or closed when the low-voltage MOS transistoris in a normally-open state. The driving circuit can be opened and closed once through the low-voltage MOS transistor, so that the direct drive circuit can directly drive the depletion type transistor to be opened or closed, and the problem that the switching speed of the low-voltage MOS transistor is limited is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor driving, in particular to a driving circuit of a depletion transistor. Background technique [0002] Depletion-mode transistors are an important part of power electronic devices. They are generally unipolar devices that use electrons as the medium for current transmission. Due to the fast transmission speed of electrons, they can be widely used in high-frequency and high-power-density fields. [0003] The depletion mode transistor is a normally-on device, and generally requires a negative voltage to be turned off, so that its reliability is not high in practical applications. For example, currently isolated power supplies or charge pumps are widely used to create negative voltages to control depletion-mode transistors. Personal safety, and higher manufacturing costs. [0004] In order to improve the reliability of depletion-mode transistors, low-voltage MOS transistors and depletion-mode t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/088
CPCH02M1/088
Inventor 张益鸣刘杰
Owner SHENZHEN XINER SEMICON TECH CO LTD
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