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Fluorine-containing polyether with low dielectric property and preparation method thereof

A fluorine-containing polyether, low-dielectric technology, which is applied in the preparation of ether, the preparation of organic compounds, and the preparation of ether by ester reaction, can solve the problems of difficult control of pore structure, poor mechanical properties of materials, and easy cracking of materials. Good steric hindrance effect, good mechanical properties, excellent thermal properties

Active Publication Date: 2020-08-07
镇江利德尔复合材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]In recent years, many researchers have studied nanoporous polymer materials and organic-inorganic hybrid materials. However, most of these materials have other disadvantages of poor performance, not only that, but also some problems: (1) complex process and high production cost; (2) the structure of the pores is difficult to control; (3) The size of the pore size is difficult to control, and the pore size distribution is wide; (4) The mechanical properties of the material are poor, and the mechanical strength is low; (5) The material is prone to cracks
[0005] Thermosetting polymers generally have good heat resistance, such as phenolic resin, epoxy resin, etc. However, thermosetting polymers are difficult to recycle, which is easy to cause material waste and environmental pollute

Method used

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  • Fluorine-containing polyether with low dielectric property and preparation method thereof
  • Fluorine-containing polyether with low dielectric property and preparation method thereof
  • Fluorine-containing polyether with low dielectric property and preparation method thereof

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preparation example Construction

[0034] In a second aspect, the present invention provides a method for preparing a fluorine-containing polyether with low dielectric properties, comprising:

[0035] Dissolve p-benzoquinone compounds and anthracene in a molar ratio of 1:0.9-1.1 in toluene solution, heat to 110-130°C, and react for 1-24 hours to obtain a precipitate;

[0036] Collect the precipitate, wash it with hot water, dry it, dissolve it in acetic acid, heat it to 130°C for reflux reaction for 1-24 hours, and obtain the reaction product;

[0037] Specifically, the precipitate was collected and washed three times with hot water, dried in a vacuum oven at 50° C. for 24 hours, and the dried product was dissolved in 100 ml of acetic acid.

[0038] Pour the reaction product into water, and filter to obtain triptycenediol;

[0039] The reaction equation is as follows:

[0040]

[0041] Among them, -R is any one of the following structures:

[0042]

[0043] The triptycene diphenol and triethylamine are...

Embodiment 1

[0058] In Example 1, the structural formula of the fluorine-containing polyether with low dielectric properties obtained is:

[0059]

[0060] attached figure 1 It is the nuclear magnetic resonance fluorine spectrum of the fluorine-containing polyether with low dielectric properties obtained in Example 1, and the chemical shifts of -112ppm and -130ppm are characteristic peaks of two kinds of fluorine atoms in the fluorine-containing polyether cyclopentene. figure 2 The infrared spectrogram of the fluorine-containing polyether that is the low dielectric characteristic that embodiment 1 obtains, wherein 3037cm -1 The characteristic peak of the cyclopentene structure C=C double bond, 1202cm -1 The place is the characteristic peak of C-O in the fluorine-containing polyether structure, 1118cm -1 with 637cm -1 is the characteristic absorption peak of the C-F structure.

[0061] The fluorine-containing polyether polymer prepared by Example 1 has a dielectric constant of 1.92,...

Embodiment 2

[0071] In Example 2, the structural formula of the fluorine-containing polyether with low dielectric properties obtained is:

[0072]

[0073] The fluorine-containing polyether polymer prepared by Example 2 has a dielectric constant of 1.89, a dielectric loss of 0.006, a thermal weight loss temperature of 475°C at 5%, and a carbon residue rate of 67% at 800°C.

[0074] see Figure 5 , Figure 5 It is a schematic flow chart of a method for preparing a fluorine-containing polyether with low dielectric properties provided in Example 3 of the present invention. Specifically, the method for preparing a fluorine-containing polyether with low dielectric properties may include the following steps:

[0075] S301. Dissolving 10 g of anthracene and 6.80 g of 2-methyl-p-benzoquinone in 200 ml of toluene solution, heated to 130° C., and reacted for 6 hours to obtain a precipitate;

[0076] S302. After the reaction is completed, collect the precipitate at the bottom and wash it with ho...

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Abstract

The invention discloses fluorine-containing polyether with a low dielectric property and a preparation method thereof. The fluorine-containing polyether with the low dielectric property is prepared bytaking anthracene, p-benzoquinone compounds and octafluorocyclopentene as raw materials. The prepared fluorine-containing polyether with the low dielectric property has the characteristics of low dielectric constant, low dielectric loss, good mechanical property and excellent thermal property, can be used for preparing a low-dielectric polymer-based material, and is widely applied to the fields of electronic packaging, information communication, aerospace and other high-tech industries. The preparation method of the fluorine-containing polyether with the low dielectric property is simple, high in yield and suitable for industrial production.

Description

technical field [0001] The invention relates to the technical field of polymers, in particular to a fluorine-containing polyether with low dielectric properties and a preparation method thereof. Background technique [0002] In recent years, multilayer interconnection technology has developed rapidly as a key method for producing ultra-large-scale integrated circuits (ULSI). However, the continued miniaturization in size of electronic devices used in ULSI circuits has resulted in a substantial increase in propagation delays caused by interconnects. In order to reduce the resistance-capacitance (RC) delay, insulating materials with low dielectric constant (k<3) are urgently needed. [0003] The low dielectric constant materials that have been developed so far are mainly divided into three categories: inorganic, organic and organic-inorganic hybrid. Almost all organic polymers are of low polarity and have a low dielectric constant (k=2.0-4.0). However, most organic polym...

Claims

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Application Information

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IPC IPC(8): C08G65/40C07C39/17C07C37/20C07C43/253C07C41/16
CPCC08G65/4006C07C37/20C07C41/16C07C43/253C07C2601/10C07C2603/90C07C39/17
Inventor 谢富平张侃
Owner 镇江利德尔复合材料有限公司
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