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Hybrid crucible assembly for czochralski crystal growth

A crucible and component technology, applied in the field of mixed crucible components for pulling crystal growth, can solve the problems of limited design flexibility, limited crucible life, and high price

Inactive Publication Date: 2020-08-07
CORNER STAR LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The large diameter crucible components required to grow large diameter ingots using the CCZ method have the second highest cost factor after polysilicon material, and their lifetime determines the length of the furnace cycle
[0006] Known crucibles of sufficient diameter for use in multiple crucible assemblies are expensive, have limited design flexibility, and have limited crucible life

Method used

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  • Hybrid crucible assembly for czochralski crystal growth
  • Hybrid crucible assembly for czochralski crystal growth
  • Hybrid crucible assembly for czochralski crystal growth

Examples

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Embodiment Construction

[0023] now refer to figure 1 , the crucible assembly 100 of an example embodiment includes a plurality of crucibles. Crucible assembly 100 includes an outer crucible 110 and an inner crucible 120 . Crucible assembly 100 includes crucibles of two different types and made by different processes. This provides for reduced overall cost of the crucible assembly 100, increased design flexibility, and extended crucible life as compared to crucible assemblies having only a single type of crucible.

[0024] The inner crucible 120 is an arc melting crucible formed by an arc melting process. The process generally involves melting a precursor material, such as high purity quartz sand, with an electric arc. In one embodiment, the inner crucible 120 is formed by pouring high purity quartz sand into a rotating mold, and then melting from the inside out using an electric arc generated by two or more graphite electrodes. High-purity quartz sand is defined as sand containing no more than 3...

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Abstract

A crucible assembly for growing a crystal ingot using a Czochralski process includes an outer crucible and an inner crucible. The inner crucible is disposed within the outer crucible and has a channelconfigured for fluid communication between the outer crucible and the inner crucible. The inner crucible is an arc-fused crucible and the outer crucible is a cast crucible.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Provisional Patent Application No. 62 / 555,900, filed September 8, 2017, the entire disclosure of which is incorporated herein by reference in its entirety. technical field [0003] The present disclosure relates generally to systems and methods for producing ingots of solar grade or semiconductor materials, and more particularly to crucible assemblies comprising two types of crucibles for use in such systems and methods. Background technique [0004] Crystalline silicon solar cells currently account for the majority of the total supply of photovoltaic (PV) modules. In the standard pulling (Czochralski, CZ) method, polysilicon is first melted in a crucible, such as a quartz crucible, to form a silicon melt. The pre-orientated seed is then lowered into contact with the melt and slowly withdrawn. By controlling the temperature, the silicon melt at the seed-melt interface solidif...

Claims

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Application Information

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IPC IPC(8): C30B15/12C03B19/09C30B29/06C30B35/00C03B19/02
CPCC03B19/02C03B19/066C03B19/095C30B35/002C30B15/12C30B29/06C30B15/002C30B15/30
Inventor 阿拉斯·玛蒂札德赫·德荷克迪乔塞夫·康拉德·霍兹尔
Owner CORNER STAR LTD