Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of organic crystalline thin film and organic field effect transistor

An organic and crystalline technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as difficult to achieve consistent single crystal orientation, low resolution, and difficult organic crystal consistency. It is conducive to the promotion and use of large areas, easy to control, and simple to operate.

Active Publication Date: 2022-07-29
SUZHOU UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the physical vapor deposition method is recognized as a method for preparing organic single crystals with high crystallinity and high quality, but the crystal growth position and orientation are relatively random.
The inkjet printing method can achieve fixed-point growth of organic single crystals, but the resolution is low, and it is difficult to achieve consistent orientation of each single crystal
[0004] In short, the existing above-mentioned preparation methods all have certain defects in the preparation of highly oriented organic single crystals, and it is difficult to maintain the orientation consistency of the organic crystals in the array or to achieve the consistency of the orientation of large-area organic crystals.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of organic crystalline thin film and organic field effect transistor
  • Preparation method of organic crystalline thin film and organic field effect transistor
  • Preparation method of organic crystalline thin film and organic field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0060] The preparation method of the organic crystalline thin film of the present invention comprises the following steps:

[0061] S1. Provide a silicon oxide wafer as a substrate, and set an insulating layer on the substrate;

[0062] S2. A positive resin channel array is formed on the surface of the insulating layer by photolithography; the end of the positive resin channel array is a periodically changing hourglass-shaped structure, which is used to filter the crystal orientation, so that the crystals with the same orientation are The two sides of the hourglass-shaped structure are epitaxially grown and entered into the positive glue channel array;

[0063] S3, performing hydrophilic and hydrophobic treatment on the positive glue channel array to obtain hydrophilic and hydrophobic templates with different hydrophilic and hydrophobic properties on the substrate;

[0064] S4, spread the organic single crystal small molecule solution on the hydrophilic and hydrophobic template...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of an organic crystalline thin film and an organic field effect transistor. The preparation method comprises the following steps: providing a silicon monoxide wafer as a substrate, and arranging an insulating layer on the substrate; Positive glue channel array; the end of the positive glue channel array is a periodically changing funnel shape to filter the crystal orientation, so that crystals with the same orientation grow epitaxially along both sides of the funnel and enter the positive glue channel Arrays; hydrophilic and hydrophobic treatments are carried out on the positive glue channel array to obtain hydrophilic and hydrophobic templates with different hydrophilic and hydrophobic properties on the substrate; the organic single crystal small molecule solution is spread on the hydrophilic and hydrophobic templates by the blade coating method to obtain uniform crystal orientation. Organic crystalline thin films. The preparation method of the organic crystalline thin film of the present invention can realize the directional positioning growth of the organic single crystal with high orientation in a large area. At the same time, the preparation method is simple to operate, easy to control, and beneficial to popularization and use in a large area.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a preparation method of an organic crystalline thin film and an organic field effect transistor. Background technique [0002] The highly oriented organic single crystal has the advantages of highly ordered molecular packing and less defects, and can realize fast carrier transport. Moreover, improving the orientation of the crystal can significantly improve the device performance of the organic field effect transistor, and improve the stability and repeatability of the device. [0003] At present, a variety of organic single crystal growth techniques have been developed, such as interfacial self-assembly, physical vapor deposition (PVD), microstructure induced crystallization, template confinement spin coating, inkjet printing, solution pulling , solution scraping method, etc. Among them, the physical vapor deposition method is recognized as a method ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/40H01L51/05
CPCH10K71/12H10K10/462H10K10/484
Inventor 揭建胜邓巍张秀娟张夏丽
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products