Control method and control device for etching process, storage medium and etching equipment

Abstract

The invention provides an etching process control method and device, a storage medium and etching equipment, and the method comprises the steps: introducing etching gas into an etching cavity so as toetch a wafer, forming a preset structure, and enabling the wafer to be absorbed on a base station in the etching cavity; and eliminating the adsorption static electricity between the base station andthe wafer, and introducing clean gas into the etching cavity, wherein the clean gas is gas used for removing at least part of by-products in the etching cavity, and the by-products are generated in the etching process. Compared with the scheme in the prior art, in the scheme, only two steps are needed in the etching process, so that the time of the etching process is shortened, the problem that in the prior art, time consumed for etching to form a step structure in a 3D NAND flash memory is long is solved, and the production efficiency of the wafer is improved.

Description

technical field [0001] The present application relates to the field of semiconductors, and in particular, relates to a method for controlling an etching process, a method for forming a step structure of 3D NAND, a control device, a storage medium, a processor, and an etching device. Background technique [0002] In recent years, the development of flash memory (Flash Memory) has been particularly rapid. The main feature of flash memory is that it can keep stored information for a long time without power on. Therefore, it has been widely used in many fields such as microcomputer and automatic control. [0003] In the 3D NAND flash memory in the prior art, such as figure 1 As shown, the stepped structure needs to be formed by dry etching. Since the number of structural layers in the current stacked structure is large, it is generally necessary to form multiple steps through multiple etching processes to form the stepped structure. At present, etching is carried out in the et...

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Problems solved by technology

[0006] The main purpose of this application is to provide a method for controlling the etching process, a method for forming a step structure of 3D NAND, a control device, a storage medium, a processor, and an etching device, so as to solve the problem of etching in 3D NAND flash memory in the prior art. The time-consuming problem of eroding to form a stepped structure

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