Method for fabricating semiconductor device, semiconductor device and semiconductor integrated circuit
A semiconductor and device technology, applied in the field of semiconductor devices and semiconductor integrated circuits, can solve problems such as the difficulty in large-scale application of silicon photonics technology
Active Publication Date: 2021-02-12
UNITED MICROELECTRONICS CENT CO LTD
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Problems solved by technology
[0003]
However, the CMOS process-compatible silicon photonics process is facing some challenges
For example, in order to provide optical transmission channels to photonic devices, it is necessary to use the windowing process to carve through the multi-layer dielectric material layers in the silicon photonics chip, which makes the large-scale application of the silicon photonics process difficult
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[0014] It will be understood that although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and / or sections, that these elements, components, regions, layers and / or Sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
[0015] Spatially relative terms such as "below," "beneath," "lower," "below," "above," "upper," etc. may be used herein for convenience. The description is used to describe the relationship of one element or feature to another element or feature(s) as illustrated in the figures. It will be understood that these spatially relative terms are intended t...
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Abstract
A method of manufacturing a semiconductor device, a semiconductor device and a semiconductor integrated circuit are disclosed. The method includes: providing a semiconductor-on-insulator substrate comprising a first substrate, a first insulating layer on the first substrate, and a semiconductor layer on the first insulating layer; patterning the semiconductor layer to form a grating coupler; Form at least one functional layer stacked on top of each other on the side of the semiconductor layer away from the first insulating layer; bond the at least one functional layer to a carrier substrate on the side of the at least one functional layer away from the semiconductor layer; and completely remove the first functional layer A substrate such that an optical transmission channel is provided between the grating coupler and the exterior of the semiconductor device on the side of the first insulating layer facing away from the semiconductor layer via the first insulating layer and not via the first substrate.
Description
technical field [0001] The present disclosure relates to the field of semiconductor technology, in particular to a method for manufacturing a semiconductor device, a semiconductor device and a semiconductor integrated circuit. Background technique [0002] Silicon photonics technology uses optical signals instead of electrical signals to transmit data. It offers advantages of high integration, high transfer rate, low power consumption, etc., and is therefore considered a promising technology. The development of a process for silicon photonics chips based on a complementary metal compound semiconductor (CMOS) process is a mainstream research direction in the industry. [0003] However, the CMOS process-compatible silicon photonics process is facing some challenges. For example, in order to provide optical transmission channels to photonic devices, it is necessary to use a windowing process to carve through the multi-layer dielectric material layers in the silicon photonics ...
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IPC IPC(8): G02F1/035
CPCG02F1/035G02B6/4215G02B6/34G02B2006/12147H01L27/1203
Inventor 朱继光韩建忠金里
Owner UNITED MICROELECTRONICS CENT CO LTD