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High-frequency front-end circuit

一种前端电路、高频的技术，应用在高频前端电路领域，能够解决功率放大器振荡等问题，达到抑制输出特性的劣化的效果

Active Publication Date: 2020-09-04
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In turn, it may even cause the power amplifier to oscillate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0038] figure 1 It is a diagram showing the appearance of the high-frequency front-end circuit according to the first embodiment. A high-frequency front-end circuit 1 according to Embodiment 1 includes a substrate 2 and a substrate 3 .

[0039] The high-frequency front-end circuit 1 can be used in mobile wireless communication terminal devices such as mobile phones and smart phones to transmit and receive various signals such as voice and data to and from a base station.

[0040] The substrate 2 is a non-semiconductor substrate. As for the substrate 2 , a rigid substrate made of glass epoxy resin, LTCC (Low Temperature Co-fired Ceramic, low temperature co-fired ceramic), etc., or a flexible substrate made of liquid crystal polymer, polyimide resin, or the like can be exemplified.

[0041] The substrate 3 is a semiconductor substrate. An IC (Integrated Circuit, integrated circuit) chip (die) can be illustrated as the substrate 3 .

[0042] The substrate 2 is parallel to the...

Embodiment approach 2

[0065] Figure 5 It is a diagram showing a schematic configuration of a high-frequency front-end circuit according to Embodiment 2. In addition, the same reference numerals are assigned to the same components as those in Embodiment 1, and description thereof will be omitted.

[0066] In this embodiment, the first power amplifier 5, the second power amplifier 6, the first power supply inductor L11, the second power supply inductor L12, the first matching inductor L21, and the second The matching inductor L22 is provided on the substrate 3a.

[0067] In this embodiment, the substrate 3 a is a semiconductor substrate and constitutes an IC chip arranged on the substrate 2 . Contains the first power amplifier 5, the second power amplifier 6, the first power supply inductor L11, the second power supply inductor L12, the first matching inductor L21, and the second matching inductor The IC chip of L22 is mounted on a substrate 2 which is a non-semiconductor substrate, and constitut...

Embodiment approach 3

[0073] Figure 6 It is a diagram showing the appearance of the high-frequency front-end circuit according to Embodiment 3. Figure 7 It is a diagram showing a schematic configuration of a high-frequency front-end circuit according to Embodiment 3. In addition, the same reference numerals are assigned to the same components as those in Embodiments 1 and 2, and description thereof will be omitted.

[0074] A high-frequency front-end circuit 1 b according to Embodiment 3 includes a substrate 2 , a substrate 3 , and a substrate 4 .

[0075] The substrate 4 is a semiconductor substrate. As for the substrate 4 , an integrated passive device (IPD; Integrated Passive Device, integrated passive device) can be exemplified.

[0076] The substrate 4 is parallel to the X-Y plane. Moreover, the board|substrate 4 and the board|substrate 2 are arrange|positioned overlapping, seeing from Z direction. The substrate 2 has an area equal to or larger than a region where the substrate 3 and th...

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Abstract

The invention provides a high-frequency front-end circuit capable of being minimized in size while suppressing degradation of output characteristics of a high-frequency signal. The high-frequency front-end circuit 1 includes a plurality of power amplifiers 5, 6. Power supply inductors L11, L12 and matching inductors L21, L22 for the power amplifiers 5, 6 are formed of conductors disposed on a substrate. The power supply inductors L11, L12 and the matching inductors L21, L22 are disposed on or in different layers. When the substrate is seen in a plan view, at least a portion of the first powersupply inductor L11 and at least a portion of the second matching inductor L22 overlap each other with an insulating layer interposed therebetween.

Description

technical field [0001] The present invention relates to a high-frequency front-end circuit. Background technique [0002] In a high-frequency front-end circuit mounted in mobile wireless communication terminal devices such as mobile phones and smart phones, for example, a plurality of power amplifiers for respectively amplifying high-frequency signals with different transmission frequencies may be formed on the same substrate. Generally, such a high-frequency front-end circuit is configured to exclusively operate a plurality of power amplifiers. [0003] An inductor for power supply is provided on the power supply path of the power amplifier. In addition, a matching inductor is provided in the output path of the high-frequency signal of the power amplifier. It is conceivable to configure these inductors by wiring on a substrate, but there is a problem of increasing the size of the substrate. Patent Document 1 described below describes a structure in which an inductor for ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F3/189
CPCH03F1/30H03F3/189H03F1/565H03F3/195H01L23/66H03F3/68H03F3/245H03F2200/451H03F2200/516H01L2223/6655H03F3/211
Inventor 伊藤雅广
Owner MURATA MFG CO LTD
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