Surface acoustic wave device and preparation method thereof
A surface acoustic wave device, semiconductor technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, electrical components, etc., can solve problems such as interference
Active Publication Date: 2020-09-04
CSMC TECH FAB2 CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
[0003] Based on this, it is necessary to propose a method for preparing a surface acoustic wave device and a surface acoustic wave device for the problem that the receiving end of the above-mentioned surface acoustic wave device is easily interfered by the acoustic wave.
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[0026] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.
[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0028] The ap...
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Abstract
The invention relates to a preparation method of a surface acoustic wave device and the surface acoustic wave device prepared by the preparation method. The preparation method comprises the followingsteps: forming a groove array on a semiconductor substrate; performing thermal annealing to enable the groove arrays to deform and then communicate with each other to form a cavity, and connecting thesemiconductor substrate above the cavity to seal the cavity; and forming a piezoelectric film on the semiconductor substrate above the cavity, forming a metal electrode connected with the piezoelectric film, and the piezoelectric film comprising a piezoelectric material. According to the surface acoustic wave device formed through the preparation method, the semiconductor substrate is internallyprovided with the cavity, bulk acoustic waves excited by the piezoelectric film can be isolated, the parasitic effect of the piezoelectric film at the receiving end is avoided, and the reliability ofthe surface acoustic wave device is improved.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a surface acoustic wave device and a preparation method thereof. Background technique [0002] Surface acoustic wave devices convert electrical energy and mechanical energy through piezoelectric materials. Silicon wafers can be used as substrates, and piezoelectric thin films are deposited on the silicon wafers to form signal transceiver structures. When electrical signals are applied to the piezoelectric thin films at the transmitting end, The piezoelectric film converts the electrical signal into a surface acoustic wave propagating on the silicon surface due to the piezoelectric effect, and when the surface acoustic wave propagates to the piezoelectric film at the receiving end, it is converted into an electrical signal again and output. However, after receiving the electrical signal, the piezoelectric film at the transmitting end can not only excite the surface acoustic wave, but...
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IPC IPC(8): H03H9/145H01L41/332H01L41/29H10N30/06H10N30/082
CPCH03H9/145H10N30/06H10N30/082
Inventor 苏佳乐夏长奉周国平张新伟
Owner CSMC TECH FAB2 CO LTD