Junction temperature measurement method of SiC MOSFET
A measurement method and junction temperature technology, applied in the field of junction temperature measurement, can solve problems such as low measurement accuracy
Pending Publication Date: 2020-09-25
CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
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[0003] Based on this, it is necessary to provide a junction temperature measurement method for SiC MOSFETs to solve the problem that the existing junction temperature measurement method is easily affected by electromagnetic interference and package aging, resulting in low measurement accuracy.
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[0019] In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the related drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that a thorough and complete understanding of the present disclosure is provided.
[0020] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical", "horizontal", "left", "right", "upper", "lower", "front", "rear", "circumferential" and similar...
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The invention relates to the technical field of junction temperature measurement, and discloses a junction temperature measurement method of a SiC MOSFET. The method for measuring the junction temperature of the SiC MOSFET comprises the following steps of: enabling the SiC MOSFET to be in a working mode; when the SiC MOSFET is in a cut-off state and the body diode of the SiC MOSFET is in a followcurrent conduction state, measuring the luminous intensity of the SiC MOSFET and the follow current of the body diode of the SiC MOSFET; and obtaining the junction temperature of the SiC MOSFET basedon the luminous intensity and the current. According to the invention, the junction temperature of the SiC MOSFET is detected based on temperature-sensitive optical parameters; the junction temperature of the SiC MOSFET is calculated by collecting the luminous intensity and the follow current of the SiC MOSFET in the working mode and combining the relationship between the luminous intensity and the follow current and the relationship between the luminous intensity and the temperature. Therefore, the sampling signal in the method is not influenced by electromagnetic interference and packaging aging in the quick switching process, the junction temperature can be monitored on line in real time in the working process of the SiC MOSFET quick switch, and meanwhile the junction temperature monitoring precision is improved.
Description
technical field [0001] The invention relates to the technical field of junction temperature measurement, in particular to a junction temperature measurement method of a SiC MOSFET. Background technique [0002] SiC MOSFETs are a next-generation emerging device commonly used in high switching frequency, high voltage and high temperature converter modules. With the successful commercialization of wide-bandgap devices, the application of SiC-based power MOSFETs is gradually growing. Junction temperature variation plays a crucial role in the reliable operation of SiC MOSFET power devices, so real-time monitoring of junction temperature of SiC MOSFET devices is of great significance for safe operation and reliability evaluation. However, the existing junction temperature measurement method, the temperature-sensitive electrical parameter method, has two problems. First, the electrical signal of the SiC MOSFET with fast switching speed will be interfered by the high EMI environmen...
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IPC IPC(8): G01R31/26
CPCG01R31/2628
Inventor 陈媛陈义强贺致远侯波刘昌
Owner CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST