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Thin film transistor, array substrate and manufacturing method thereof

A technology of thin film transistors and array substrates, applied in the display field, can solve the problems of complex manufacturing process, increased cost, increased number of masks, etc., and achieve the effects of improving production efficiency, preventing wire breakage, and reducing costs

Active Publication Date: 2020-09-29
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, because LTPO uses two kinds of active layers at the same time, the number of masks required in the manufacturing process increases, the process is more complicated, and the cost also increases

Method used

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  • Thin film transistor, array substrate and manufacturing method thereof
  • Thin film transistor, array substrate and manufacturing method thereof
  • Thin film transistor, array substrate and manufacturing method thereof

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Embodiment Construction

[0042] The following will clearly and completely describe the technical solution in the application with reference to the accompanying drawings in the implementation manner of the application. Apparently, the described implementations are only some of the implementations of this application, not all of them. Based on the implementation manners in this application, all other implementation manners obtained by those skilled in the art without creative efforts shall fall within the scope of protection of this application.

[0043] Please also refer to Figure 1(a) to Figure 1(g) , the first embodiment of the present application provides a method for manufacturing an array substrate, which includes the following steps:

[0044] S1: Please refer to FIG. 1(a), providing a first substrate 100a. Wherein, the first substrate 100a includes a substrate 10, a first active layer 21 and a first gate metal layer 22 disposed on the substrate 10, disposed on the first active layer 21 and the...

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Abstract

The invention provides a manufacturing method of an array substrate, the array substrate and a thin film transistor. The thin film transistor includes a gate, an active layer which is arranged corresponding to a grid electrode, a source electrode and a drain electrode which are arranged at two ends of the active layer and are electrically connected with the active layer, and an interlayer insulating layer which is arranged among the active layer, the source electrode and the drain electrode, wherein a step-shaped contact hole is formed in the interlayer insulating layer, and the source electrode and the drain electrode are respectively filled in the contact hole and are electrically connected with the active layer.

Description

technical field [0001] The present application relates to the display field, in particular to a thin film transistor, an array substrate and a manufacturing method thereof. Background technique [0002] In existing organic light-emitting diode (Organic Light-Emitting Diode, OLED) display devices, in order to achieve low power consumption, a mainstream technology is to use low-temperature polysilicon (LTPS) in driving thin film transistors (Thinfilm transistor, TFT) and switching thin film transistors. Low Temperature Poly-silicon, LTPS) as the active layer. However, the carrier mobility of LTPS is large, and there is a problem of high leakage current. On this basis, a low temperature polycrystalline oxide (Low Temperature Polycrystalline-Si Oxide, LTPO) technology is produced. LTPO combines the advantages of both LTPS and metal oxides such as InGaZnO, resulting in a fast response and low power consumption solution. However, because LTPO uses two kinds of active layers at ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/06H01L21/336H01L27/12
CPCH01L29/786H01L29/0603H01L29/66742H01L27/1214H01L27/1288H01L27/127H01L27/124H01L27/1225H01L29/41733H01L27/1248H01L29/78633
Inventor 龚吉祥张毅先鲜于文旭
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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