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Thin film transistor substrate and preparation method of thin film transistor substrate

A technology of thin film transistors and substrates, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of complex preparation process, many photomask manufacturing processes, and high manufacturing cost of thin film transistors, so as to reduce the photomask mask process, The effect of reducing production costs and simplifying the structure

Active Publication Date: 2021-10-08
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing top-gate thin-film transistor manufacturing technology, the problems of many photomask manufacturing processes in the manufacturing process, complex manufacturing process, and high manufacturing cost of thin-film transistors have been solved.

Method used

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  • Thin film transistor substrate and preparation method of thin film transistor substrate
  • Thin film transistor substrate and preparation method of thin film transistor substrate
  • Thin film transistor substrate and preparation method of thin film transistor substrate

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Embodiment Construction

[0035] The technical solutions in the embodiments of the disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the disclosure. Apparently, the described embodiments are only some of the embodiments of the present disclosure, not all of them. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present disclosure.

[0036] Currently, there is no overlap between the source / drain electrodes and the gate in top-gate self-aligned structure metal oxide thin film transistors, so it has lower parasitic capacitance, better extension performance, and lower signal delay However, when preparing top-gate thin film transistors, more photomask and mask steps are required, which is not conducive to process simplification and product cost reduction.

[0037] like figure 1 as shown, figure 1 A schematic diagram o...

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Abstract

The invention provides a thin film transistor substrate and a preparation method thereof. The thin film transistor substrate includes a metal layer, a buffer layer, a switching thin film transistor, and a driving thin film transistor. The metal layer includes the source of the switching thin film transistor, the first metal layer and the light-shielding layer, wherein the source, the first metal layer and the light-shielding layer are formed by patterning the same metal layer and arranged in the same layer. In the disclosed embodiment The structure omits the flat layer structure, effectively simplifies the structure of the thin film transistor substrate, reduces the mask mask process in the preparation process, reduces the number of masks, simplifies the production process, and reduces the production cost.

Description

technical field [0001] The present disclosure relates to the technical field of display manufacturing, and in particular to a thin film transistor substrate and a method for preparing the thin film transistor substrate. Background technique [0002] At present, thin film transistors (thin film transistors, TFTs) are the main switching elements in liquid crystal display devices and active matrix driven organic electroluminescence display devices, and their performance is directly related to the development direction of display devices. [0003] Thin-film transistors have many different structures. Traditional bottom-gate thin-film transistors tend to generate large parasitic capacitance, high signal delay rate and large device size due to the large overlapping area between the gate and source-drain electrodes. The top gate thin film transistor has lower parasitic capacitance, better ductility, and signal delay rate because there is no overlap between the source and drain elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/417H01L27/12H01L21/77
CPCH01L27/1214H01L27/1288H01L29/41733H01L29/78633
Inventor 卢马才
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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