A kind of thin film transistor and its manufacturing method

A technology of thin film transistors and manufacturing methods, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., and can solve problems such as storage capacitance reduction
CN109659372BActive Publication Date: 2019-07-09NANJING CEC PANDA LCD TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NANJING CEC PANDA LCD TECH
Publication Date
2019-07-09

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Abstract

The invention provides a thin film transistor and a manufacturing method thereof, and relates to the technical field of liquid crystal display. The manufacturing method of an oxide thin film transistor, in combination with a traditional 6Mask process (gate, semiconductor layer / source drain, organic insulating layer, common electrode, second insulating layer, pixel electrode), constructs the commonelectrode (Com electrode) on a bottom layer. The common electrode and the gate are completed at a time to reduce a mask process (achieved by semi-transparent mask multi-stage exposure), so as to forma bottom Com architecture. In addition, an organic insulating film is not required, and an FFS array substrate is manufactured in four mask processes. Further, an intermediate protective layer of thepixel electrode and the common electrode in the pixel region of the thin film transistor has a suitable thickness (2000 angstroms to 8000 angstroms) required to form a storage capacitor.
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Description

technical field

[0001] The invention belongs to the field of liquid crystal display, and in particular relates to a thin film transistor and a manufacturing method thereof. Background technique

[0002] Fringe Field Switching (FFS for short) technology is a current liquid crystal display technology and a wide viewing angle technology developed to solve large-size, high-definition desktop monitors and LCD TV applications. FFS LCD panels have the advantages of fast response time, high light transmittance, and wide viewing angles. However, since FFS LCD panels are made of two layers of indium tin oxide (ITO for short), the manufacturing process of FFS LCD panels requires One or two more photomask (reticle) processes than ordinary LCD panels.

[0003] In order to reduce costs, increase production capacity, and enhance the competitiveness of oxide thin film transistors, further research on the reduction of the number of photomasks is required. In the existing technology, compar...

Claims

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