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Thin film transistor array substrate, manufacturing method thereof, and liquid crystal display panel

A technology of thin-film transistors and array substrates, which is applied in the fields of thin-film transistor array substrates and liquid crystal display panels, can solve problems that cannot be solved, and achieve the effects of avoiding pollution and damage, better electrical reliability, and shortening time

Active Publication Date: 2020-10-30
KUSN INFOVISION OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

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  • Thin film transistor array substrate, manufacturing method thereof, and liquid crystal display panel
  • Thin film transistor array substrate, manufacturing method thereof, and liquid crystal display panel
  • Thin film transistor array substrate, manufacturing method thereof, and liquid crystal display panel

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Embodiment Construction

[0043] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manners of the present invention will be further described below in conjunction with the accompanying drawings.

[0044] Figure 1A to Figure 1I It is a schematic top view structure diagram of an embodiment of the present invention when preparing a thin film transistor array substrate. Figure 2A to Figure 2I It is a schematic diagram of a partial cross-sectional structure of an embodiment of the present invention when preparing a thin film transistor array substrate.

[0045] The manufacturing method of the thin film transistor array substrate 10 includes the following steps:

[0046] Such as Figure 1A and 2AAs shown, a patterned gate 12 is formed on a substrate 11 . The substrate 11 is, for example, a glass substrate or a plastic substrate. When fabricating the gate 12 on the substrate 11, a layer of gate metal material layer is first deposited on t...

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Abstract

The invention provides a thin film transistor array substrate manufacturing method, a thin film transistor array substrate and a liquid crystal display panel. In the thin film transistor array substrate manufacturing method, an exposed metal oxide semiconductor material layer is converted to a second insulating layer, the exposure time of an oxide semiconductor channel to air is shortened, the channel can be prevented from external pollution and damages, and the metal oxide semiconductor material layer thus has better electrical reliability. The metal oxide semiconductor material layer uses oxygen or nitrous oxide to convert part of the metal oxide semiconductor material layer to an insulator, etching towards the metal oxide semiconductor material layer is replaced, the problems of side etching and undercutting caused by secondary etching in the existing methods can be avoided, the process of manufacturing a photomask of a metal oxide active layer is saved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of displays, in particular to a manufacturing method of a thin film transistor array substrate, a thin film transistor array substrate and a liquid crystal display panel. Background technique [0002] With the development of display technology, liquid crystal display panels (Liquid Crystal Display, LCD) are more and more popular due to their advantages of lightness and low radiation. The liquid crystal display panel includes an opposite color filter substrate (color filter, CF) and a thin film transistor array substrate (TFT array), and a liquid crystal layer (LC layer) sandwiched between them. [0003] Amorphous silicon (a-Si) is currently the semiconductor layer material commonly used to make thin-film transistors (TFTs) on array substrates. However, due to its own defects, amorphous silicon has problems such as low electron mobility and poor stability. Its use in the display field is limited. As the res...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77G02F1/1368G02F1/1362
CPCG02F1/1362G02F1/1368H01L27/1248H01L27/1259
Inventor 何佳新
Owner KUSN INFOVISION OPTOELECTRONICS
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