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A cavity resonance suppression structure and its application

A resonance suppression and cavity technology, applied in resonators, antennas, electrical components, etc., to achieve the effect of eliminating the original amplitude and phase jitter and improving the amplitude and phase control accuracy

Active Publication Date: 2020-11-24
GREAT MICROWAVE TECH CO LTD
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0006] In order to solve the shortcomings of the existing three-dimensional heterogeneous integrated radio frequency structure, the present invention provides a cavity resonance suppression structure and its application, which realizes the large-scale multi-channel monolithic integrated radio frequency chip structure embedded in the silicon adapter board (three-dimensional heterogeneous Integrated RF structure) cavity resonance suppression, which significantly improves the phased array amplitude and phase control accuracy, in-band amplitude flatness and in-band phase linearity are affected by cavity resonance

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  • A cavity resonance suppression structure and its application
  • A cavity resonance suppression structure and its application
  • A cavity resonance suppression structure and its application

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Embodiment

[0048] This embodiment proposes a cavity resonance suppression structure, the cavity resonance suppression structure is used to suppress the cavity resonance of the three-dimensional heterogeneous integrated radio frequency structure; the cavity resonance suppression structure is applied in the three-dimensional heterogeneous integrated radio frequency structure when, such as Figures 1 to 3 shown.

[0049] The three-dimensional heterogeneous integrated radio frequency structure includes an upper silicon transfer board and a lower silicon transfer board that are para-bonded together, and an air cavity (air cavity of the lower silicon transfer board) is etched in the lower silicon transfer board , the air cavity of the lower silicon adapter board is embedded with a radio frequency chip, the radio frequency chip is provided with an on-chip transmission line for propagating millimeter wave signals, and the upper silicon adapter board is engraved on a position corresponding to the...

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Abstract

The invention relates to a cavity resonance suppression structure and application. The cavity resonance suppression structure is used for suppressing cavity resonance of a three-dimensional heterogeneous integrated radio frequency structure, wherein the three-dimensional heterogeneous integrated radio frequency structure comprises a lower-layer adapter plate embedded with a radio frequency chip, an upper-layer adapter plate aligned and bonded with the lower-layer adapter plate, and an on-chip transmission line arranged on the radio frequency chip, an air cavity is formed in the position, corresponding to the radio frequency chip, of the upper-layer adapter plate, and the cavity resonance suppression structure comprises a resistance film and a resonance ring group which are sequentially arranged at the bottom of the air cavity of the upper adapter plate. According to the cavity resonance suppression structure disclosed by the invention, cavity resonance suppression of a silicon adapterplate embedded with a large-size multichannel monolithic integrated radio frequency chip structure is realized; and through ultra-wideband matching and low-insertion-loss transmission of a radio frequency chip embedded in an air cavity, the influence of cavity resonance on phased array amplitude-phase control precision, in-band amplitude flatness and in-band phase linearity is remarkably improved.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional heterogeneous integrated radio frequency structures, in particular to a cavity resonance suppression structure and its application. Background technique [0002] In millimeter-wave phased array applications, the half-wavelength antenna element spacing is very small, and the RF channel spacing is less than 5 mm. It is difficult for traditional single-channel RF chips to complete the layout within this scale. In order to solve the above contradictions, multi-channel single-chip integrated radio frequency chips are currently used to reduce the space occupied by the interconnection wiring between channels, and a three-dimensional integration scheme is used to achieve vertical stacking of channel chips to further reduce space occupied. [0003] With the development of silicon-based micro-electromechanical (MEMS) and RF through-silicon via (TSV) process technologies, 3D heterogeneous integrati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P7/06H01Q21/00
CPCH01P7/065H01Q21/00
Inventor 张兵张勋宋启河
Owner GREAT MICROWAVE TECH CO LTD