Silicon carbide single crystal growth device

Abstract

The invention discloses a silicon carbide single crystal growth device, comprising: a graphite crucible, wherein the graphite crucible is used for containing silicon carbide powder, and the silicon carbide powder is heated to make the silicon carbide powder The sublimation is decomposed into gas phase components; the seed crystal holder is used to hold the seed crystal capable of growing silicon carbide single crystal; the heat conduction container includes a container wall and a cavity, and the heat conduction container is arranged in the graphite crucible, and the cavity For containing silicon-containing powder, the container wall is used to conduct the heat of the graphite crucible into the cavity, so that the gas phase components generated by the nano-silicon-containing powder after absorbing heat can be released slowly into the silicon carbide powder in the graphite crucible. It realizes the addition of vapor-phase silicon components during the growth of silicon carbide single crystal, reduces the carbonization of silicon carbide powder, and keeps the ratio of carbon and silicon components in the crystal growth area unchanged, reducing carbon inclusion defects in silicon carbide single crystals. Improve the growth quality of silicon carbide single crystal.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment, and more specifically, to a silicon carbide single crystal growth device. Background technique [0002] Silicon carbide SiC belongs to the third generation of semiconductor materials. It has the characteristics of wide bandgap, high thermal conductivity, high critical breakdown field, and high electron saturation drift rate. It is a popular material for preparing high-temperature, high-frequency, and high-power devices. Automobiles, high-speed rail, communications, aerospace and other fields have broad prospects. [0003] The current silicon carbide single crystal growth technologies mainly include physical vapor transport (PVT), liquid phase epitaxy (LPE) and chemical vapor deposition (CVD). Among them, PVT technology has been widely used. Its principle is to heat the graphite crucible placed in the coil through medium frequency induction heating, and form an axial temperature g...

AI Technical Summary

Problems solved by technology

The uneven radial heat transfer of the crucible can easily lead to uneven distribution of the thermal field, resulting in uneven distribution of gas phase components, resulting in different concentrations of components on the radial distribution of the seed crystal surface, which is not conducive to the preparation of high-quality silicon carbide crystals

Images