A kind of microwave dielectric ceramic material and its preparation method and application

A technology of microwave dielectric ceramics and applications, which is applied in the field of microwave dielectric ceramic materials and its preparation, can solve the problems of high dielectric constant and sintering temperature of microwave dielectric ceramic materials, and limited use of microwave communication devices, so as to avoid electrical Deterioration of properties, effect of low densification temperature, high relative density

Active Publication Date: 2022-06-07
YANCHUANG PHOTOELECTRIC TECH GANZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the dielectric constant and sintering temperature of microwave dielectric ceramic materials are still high, and their use in microwave communication devices based on low-temperature co-fired ceramic technology is still limited

Method used

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  • A kind of microwave dielectric ceramic material and its preparation method and application
  • A kind of microwave dielectric ceramic material and its preparation method and application
  • A kind of microwave dielectric ceramic material and its preparation method and application

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Embodiment 1-7

[0036] This embodiment 1-7 provides a microwave dielectric ceramic material, using Zn 3 B 2 O 6 and Mg 3 B 2 O 6 Two materials, Zn 3 B 2 O 6 and Mg 3 B 2 O 6 The molar ratio is (1-x):x, where x=0.05-0.40. Prepared from the oxides of the components in the following molar percentages:

[0037] Main ingredient ZnO, 71.25~45.00%;

[0038] Main ingredient B 2 O 3 , 25.00%;

[0039] Substitute material MgO, 3.75~30.00%;

[0040] The sum of the molar percentages of the above components is 100%, and the molar ratio of the ZnO to the MgO is (0.95:0.05)˜(0.60:0.40).

[0041] The oxide molar percentage of each embodiment is shown in Table 1.

[0042] like figure 1 As shown, its preparation method includes the steps of batching, primary ball milling, pre-sintering, secondary ball milling, and low-temperature sintering, and specifically includes the following steps:

[0043] S1. Prepare (1-x)Zn according to the molecular formula and molar ratio by the oxide method. 3 B ...

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Abstract

The invention provides a microwave dielectric ceramic material and its preparation method and application. The microwave dielectric ceramic material includes Zn 3 B 2 o 6 and Mg 3 B 2 o 6 Two materials, Zn 3 B 2 o 6 and Mg 3 B 2 o 6 The molar ratio of is (1-x):x, wherein, x=0.05~0.40, is made by the oxide compound of each component by following molar percentage: main material ZnO, 71.25~45.00%; Main material B 2 o 3 , 25.00%; substituting material MgO, 3.75~30.00%; the sum of the molar percentages of the above components is 100%, and the molar ratio of the ZnO to the MgO is (0.95:0.05)~(0.60:0.40). The microwave dielectric ceramic material has excellent characteristics of low dielectric constant, high quality factor, high relative density, relatively stable temperature characteristics and low densification temperature.

Description

【Technical field】 [0001] The invention relates to the technical field of microwave dielectric ceramic materials, in particular to a microwave dielectric ceramic material and a preparation method and application thereof. 【Background technique】 [0002] Low-temperature co-fired ceramic (LTCC) technology has attracted widespread interest from researchers due to its ability to perform large-scale three-dimensional integration with passive devices. Since silver has a melting point of 961°C, the maximum temperature of the LTCC process should be lower than its melting point. In addition, materials used in the field of microwave communication should also have a low dielectric constant (ε r ) and a high quality factor (Q×f). Therefore, considering the electrical properties of the material and the processing temperature, it has a low ε r , ceramics with high Q×f and low densification temperature have great potential application value in the field of LTCC. [0003] Zn 3 B 2 O 6 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622
CPCC04B35/453C04B35/622C04B2235/3206C04B2235/3409C04B2235/6562C04B2235/6567C04B2235/661C04B2235/77
Inventor 肖明
Owner YANCHUANG PHOTOELECTRIC TECH GANZHOU
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