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Memory device and method for adjusting read reference voltage

A technology for reading reference voltage and adjusting method, applied in static memory, read-only memory, information storage, etc., can solve the problem of incorrect data read, and achieve the effect of improving accuracy

Active Publication Date: 2022-08-02
ASOLID TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under such conditions, using the originally set read reference voltage to perform the data read operation of the memory cell will result in incorrect read data.

Method used

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  • Memory device and method for adjusting read reference voltage
  • Memory device and method for adjusting read reference voltage
  • Memory device and method for adjusting read reference voltage

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Experimental program
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Embodiment Construction

[0030] Please refer to figure 1 , figure 1 A flowchart of a method for adjusting a read reference voltage according to an embodiment of the present invention is shown. figure 1 The adjustment method of the read reference voltage is suitable for the read action of the memory. In this embodiment, the memory may be a non-volatile memory, such as a flash memory. exist figure 1 In the step S110, a plurality of read steps are performed for a plurality of storage cells of the memory, and a plurality of count values ​​of the storage cells of a set logic level are obtained respectively, wherein the count values ​​respectively correspond to the above Multiple read steps. Please refer to here figure 1 as well as Figure 2A ,in Figure 2A A graph showing the relationship between the count value and the reading step in the embodiment of the present invention. In this embodiment, the set logic level is logic level 1, for example. The read step is used to correspond to the read refe...

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Abstract

The present invention provides a memory device and a method for adjusting a read reference voltage thereof. The adjustment method for reading the reference voltage includes: obtaining a plurality of count values ​​of a memory cell for setting a logic level, and the count values ​​correspond to a plurality of reading steps respectively; calculating a plurality of count difference values ​​according to the count values; difference value to generate an average difference value, and generate a threshold value according to the average difference value; calculate the balance count value of the memory cell; obtain the first reference count value and the first reference count value according to the first read step and the second read step, respectively Two reference count values, and calculate the reference count difference; and, set the voltage adjustment value according to the reference count difference, the threshold value and the balance count value, and adjust the read reference voltage according to the voltage adjustment value to generate the adjusted reference Voltage.

Description

technical field [0001] The present invention relates to a memory device and an adjustment method for a read reference voltage thereof, in particular to a memory device and an adjustment method for dynamically adjusting the read reference voltage. Background technique [0002] In the technical field of flash memory, in order to determine the logic level of data stored in a memory cell, one or more read reference voltages need to be set, and by making the threshold voltage of the memory cell and the read reference voltage The comparison is performed to judge the logic level of the data stored in the memory cell. However, after the flash memory is used for a long period of time, after multiple program / erase cycles, or long-term data storage, the characteristics of the memory cells may change. In this way, the memory cell will drift according to the characteristics of the threshold voltage presented by the stored data. Under such conditions, using the originally set read refer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C5/14G11C16/26
CPCG11C16/26G11C5/147
Inventor 胡家玮谢宗儒魏志嘉
Owner ASOLID TECH