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Floating gate type FLASH synaptic device structure and preparation method thereof

A technology of synapse device and floating gate type, which is applied in the field of floating gate FLASH synapse device structure and its preparation, and can solve the problems of low integration and complex structure

Active Publication Date: 2020-10-27
58TH RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a floating gate type FLASH synaptic device structure and its prepara

Method used

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  • Floating gate type FLASH synaptic device structure and preparation method thereof
  • Floating gate type FLASH synaptic device structure and preparation method thereof
  • Floating gate type FLASH synaptic device structure and preparation method thereof

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Embodiment 1

[0037] The present invention provides a floating gate type FLASH synaptic device structure, including a plurality of floating gate type FLASH synaptic device units, and its structural principle is as follows figure 1 shown. The device of this structure is a 7-terminal device, including source S1, drain D1, substrate B1 of the first floating gate MOS transistor, source S2, drain D2, substrate B2 and control gate CG of the second floating gate MOS transistor; and The first floating gate MOS transistor and the second floating gate MOS transistor share the control gate CG and the common floating gate FG, and control the electrons on the floating gate through programming and erasing, so as to realize the multiplication of the first floating gate MOS transistor and the second floating gate MOS transistor A state of storing information. Specifically, the floating gate type FLASH synaptic device unit of the present invention is composed of two FLASH devices, which are respectively on...

Embodiment 2

[0047] The invention provides a method for preparing a floating gate type FLASH synaptic device structure, comprising:

[0048] A silicon base is provided as a substrate 00, on which the required deep N well 01, high voltage P well 02, STI isolation trench 03, T1 active region 11 and T2 active region 22 are fabricated sequentially; the STI The depth of isolation groove 03 is The isolation between the active regions of T1 and T2 is realized through the STI isolation groove 03;

[0049] According to the industry standard CMOS process, a sacrificial oxide layer is fabricated on the substrate 00, and trench modulation photolithography and implantation are performed on the T1 active region 11 and the T2 active region 22 to realize different intrinsic threshold voltages of T1 and T2;

[0050] Using the above surface as the substrate, remove the sacrificial oxide layer by wet method, and grow a layer of tunnel oxide layer 04; cover the above surface with N-type polysilicon layer 05...

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Abstract

The invention discloses a floating gate type FLASH synaptic device structure and a preparation method thereof, and belongs to the technical field of microelectronic integrated circuits. The floating gate type FLASH synaptic device unit comprises two FLASH tubes of a shared floating gate and a shared control gate: one pFLASH tube T1 and one nFLASH tube T2; and the pFLASH tube T1 and the nFLASH tubeT2 control various information storage states of the pFLASH tube T1 and the nFLASH tube T2 in a common-gate mode so as to establish STDP learning functions of the T1 and the T2 and realize LTD and LTP basic functions of the FLASH synaptic device. Change of floating gate charge quantity to channel resistance is realized on the basis of the shared floating gate and shared charge technology, so thatthe change can be converted into a weight relationship between programming time pulse and on resistance or reading current, and LTP and LTD functions of the synaptic device are realized. The structure has the characteristics of low power consumption, short programming time and multiple resistance distribution areas, the structural process is compatible with CMOS, the steps are simple, safety andreliability are achieved, and the structure has wide application prospects in the aspect of artificial neural network application.

Description

technical field [0001] The invention relates to the technical field of microelectronic integrated circuits, in particular to providing a floating gate type FLASH synapse device structure and a preparation method thereof for artificial intelligence neuromorphic chips. Background technique [0002] Neuron is the basic unit of information processing in the brain, and synapse is the part where neurons are functionally connected. The structure is a key part of information transmission and processing; its artificially constructed synapses are widely considered to be the core devices for hardware to build brain-like computers and artificial intelligence systems. At present, the types of artificial synaptic devices mainly include double-terminal synaptic devices and multi-terminal synaptic devices. The former includes resistor synaptic devices (resistive change memory and phase change memory), and the latter includes floating gate synaptic devices, ferroelectric Contact devices, el...

Claims

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Application Information

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IPC IPC(8): H01L27/1156H01L27/11519H01L27/11521
CPCH10B41/10H10B41/70H10B41/30
Inventor 刘国柱魏敬和于宗光宋思德曹利超赵伟
Owner 58TH RES INST OF CETC
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