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Method for improving copper precipitation defects in aluminum wires

A technology of copper precipitation and aluminum wire, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as overheating of silicon wafers, and achieve the effect of avoiding high temperature and reducing the risk of copper precipitation in aluminum

Inactive Publication Date: 2020-11-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for improving copper precipitation defects in aluminum wires, and to solve the problem of overheating of silicon wafers due to abnormalities on the wafer platform

Method used

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  • Method for improving copper precipitation defects in aluminum wires
  • Method for improving copper precipitation defects in aluminum wires
  • Method for improving copper precipitation defects in aluminum wires

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Embodiment Construction

[0016] The method for improving copper precipitation defects in aluminum wires described in the present invention is aimed at the wafers that have completed the aluminum wire or aluminum film process, that is, the wafers after the aluminum deposition has been completed, when the machine stops running due to an abnormal alarm , The high temperature of the machine makes the wafer stay at a long-term high temperature, and the copper doped in the aluminum wire or aluminum film on the wafer will precipitate out, resulting in the formation of defects. Therefore, the design concept of the present invention is that when the equipment used after aluminum deposition, such as metal sputtering equipment, metal etching equipment, dry deglue equipment, chemical vapor deposition equipment, etc., is abnormal and needs to be stopped , try to reduce the risk of the wafer being in a long-term high temperature state. The operating temperature of these machines can reach above 200 degrees Celsius,...

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Abstract

The invention discloses a method for improving copper precipitation defects in an aluminum wire, and the method comprises the steps: carrying out a subsequent high-temperature process on a wafer afteraluminum deposition, immediately lifting a lifting thimble on a wafer bearing platform to enable the wafer to be separated from the high-temperature wafer bearing platform when the wafer is processedand machine equipment gives an alarm and stops running due to abnormality, thereby preventing copper on the wafer from being separated out of aluminum due to the fact that the wafer is at a long-termhigh temperature due to heat conduction of the wafer bearing platform, and reducing the risk of wafer defects caused by copper particles.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a method for improving copper precipitation defects in aluminum wires. Background technique [0002] Aluminum wires are often used as metal connection wires for semiconductor chips, from the first layer of metal connection wires to the top layer of metal connection wires. Due to the poor electron migration characteristics of pure aluminum wires, it is usually improved by adding 0.5% copper in aluminum. The metal sputtering equipment, metal etching equipment, dry degumming equipment, chemical vapor deposition equipment, etc. used after the growth of aluminum, due to the high temperature of more than 200 degrees Celsius in the process, if the silicon wafer stays for too long, the copper will also be damaged. Easily precipitated from the aluminum wire, forming small copper particles that are difficult to etch. Due to its inherent conductivity, it will especially f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67253H01L21/67288
Inventor 刘俊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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