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A kind of etchant composition, its preparation method and application

An etching solution and composition technology, which is applied to surface etching compositions, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of many particles and precipitates, short life of liquid medicine, and improper selection ratio of etching rate.

Active Publication Date: 2021-09-28
SHANGHAI SINYANG SEMICON MATERIALS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the improper selection ratio of the etching rate of silicon oxide and silicon nitride in the prior art, and there are many particles and sediments in the solution in a short period of time during the process, resulting in short life of the potion and unable to adapt to the stacked structure Defects such as the increase of the number of layers, and provide a kind of etchant composition, its preparation method and application

Method used

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  • A kind of etchant composition, its preparation method and application
  • A kind of etchant composition, its preparation method and application
  • A kind of etchant composition, its preparation method and application

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Embodiment Construction

[0045] The present invention is further illustrated below by means of examples, but the present invention is not limited to the scope of the examples. For the experimental methods that do not specify specific conditions in the following examples, select according to conventional methods and conditions, or according to the product instructions.

[0046] 1 Preparation of etching solution composition

[0047] The structure of compound A:

[0048]

[0049] The structure of compound B:

[0050]

[0051]The preparation method of compound A and compound B refers to patent CN105254674B;

[0052] At room temperature, A or B was added to the pure phosphoric acid raw material to obtain the etching solution in Examples 1-5 and Comparative Example 1; the etching solution in Comparative Example 2 was pure phosphoric acid raw material.

[0053] The pure phosphoric acid raw materials used in the present invention are concentrated phosphoric acid with a mass percentage of 85%. For co...

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Abstract

The invention discloses an etching solution composition, its preparation and application. Specifically, the etching solution composition includes the following components in parts by mass: 76.5-84.6 parts of phosphoric acid, 13.5-15 parts of water, and 0.5-10 parts of the compound represented by formula A. Using the compound and composition represented by formula A of the present invention can provide a high selectivity ratio, improve the life of the etching solution, and be able to adapt to the increase in the number of layers of the laminated structure.

Description

technical field [0001] The invention relates to an etching solution composition, its preparation method and application. Background technique [0002] An oxide film such as a silicon oxide film and a nitride film such as a silicon nitride film are representative insulator films, and in a semiconductor manufacturing process, a silicon oxide film or a silicon nitride film may be used alone or in a laminate In the form of a laminate, one or more layers of film are stacked alternately. In addition, an oxide film or a nitride film is also used as a hard mask for forming conductive patterns such as metal wirings. [0003] In a wet etching process for removing a nitride film, an aqueous phosphoric acid solution is generally used. There are many problems in the single phosphoric acid aqueous solution, such as: the selection ratio of the etching rate of silicon oxide and silicon nitride is improper, and there are many particles and sediments in the solution in a short period of tim...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/06H01L21/311
CPCC09K13/06H01L21/31111
Inventor 王溯蒋闯季峥徐锦波
Owner SHANGHAI SINYANG SEMICON MATERIALS
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