High selectivity ratio silicon nitride etchant, its preparation method and application
A technology of etching solution and silicon nitride film, which is applied in the field of etching solution, can solve the problems of improper etching rate selection ratio, short potion life, and inability to adapt to the increase in the number of layers of the stacked structure, so as to achieve an appropriate etching rate selection ratio and increase lifespan. Effect
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[0047] 1. Preparation of etching solution
[0048] The structure of compound M:
[0049] The structure of compound N:
[0050] The preparation of compound M and compound N refers to patent CN108884116A;
[0051] At room temperature, compounds M or N were added to the phosphoric acid raw material to obtain the etching solutions in Examples 1-5 and Comparative Example 1; the etching solution in Comparative Example 2 was phosphoric acid raw material.
[0052] The phosphoric acid raw materials used in the present invention are concentrated phosphoric acid with a mass percentage of 85%. For concentrated phosphoric acid of other concentrations, the equivalent amount of concentrated phosphoric acid can be converted to this concentration by calculation.
[0053] The concentrations of the additives (compound M or compound N) in the present invention are all in mass percent, that is, the percentage of the additive mass in the total mass of the etching solution.
Embodiment 1-5， comparative Embodiment 1-2
[0055] The percentage of compound M or compound N accounting for the total mass of etching solution in table 1 etching solution
[0056] The amount of compound M or compound N added Example 1 4.5% Compound M Example 2 1.0% Compound M Example 3 9.5% Compound M Example 4 0.5% Compound M Example 5 10% Compound M Comparative Example 1 4.5% Compound N Comparative implementation 2 ━
[0057] 2. Etching experiment
[0058] ① Detection method of etching rate
[0059] Etching objects: silicon oxide film and silicon nitride film; the two film materials are respectively deposited on a patterned silicon semiconductor wafer with a thickness of The silicon oxide film and the deposition thickness formed on the patterned silicon semiconductor wafer are silicon nitride film.
[0060] Etching temperature: 159°C±2°C.
[0061] Etching container: Quartz tank.
[0062] Etching time: The silicon oxide film and the silicon nitride ...
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