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Nonvolatile memory erasing processing method and device

A technology of non-volatile memory and processing method, which is applied in the field of non-volatile memory erasing processing method and device, and can solve the problems of short service life of non-volatile memory, influence of service life of storage block to be erased, meaningless erasing pulse, etc. problems, to achieve the effect of prolonging life

Pending Publication Date: 2020-11-17
GIGADEVICE SEMICON (BEIJING) INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the inventor found in the process of studying the above-mentioned technical solution that the above-mentioned technical solution has the following defects: if the memory block to be erased is already in the erased state, the method of applying the erase pulse first in the prior art will As a result, the memory block to be erased receives a meaningless erase pulse, and the erase pulse will affect the life of the memory block to be erased, resulting in a shorter service life of the non-volatile memory

Method used

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  • Nonvolatile memory erasing processing method and device
  • Nonvolatile memory erasing processing method and device
  • Nonvolatile memory erasing processing method and device

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0036] refer to figure 1 , showing a flow chart of a method for erasing a non-volatile memory, which may specifically include the following steps:

[0037] Step 101: Perform erasure state verification on the storage block to be erased.

[0038] In the embodiment of the present invention, before performing an erasing operation on the storage block to be erased in the non-volatile memory, the erasure status of the storage block to be erased may be verified first. In a specific application, by reading the signal state of each storage unit in the storage block to be erased, if each storage unit is in a high level state, it can be explained that the storage block to be erased is in the erased state , there is no need to perform repeated erasing operations; if there are memory units in a low-level state in each memory unit, it can be explained that the memory block to be erased is in an unerased state and needs to be erased.

[0039] Step 102: When the memory block to be erased is...

Embodiment 2

[0044] refer to figure 2 , showing a specific flow chart of a method for erasing a non-volatile memory, which may specifically include the following steps:

[0045] Step 201: Perform erasure state verification on the storage block to be erased.

[0046] Step 202: When the memory block to be erased is in an erased state, no erasing pulse is applied to the memory block to be erased.

[0047] Step 203: When the memory block to be erased is in an unerased state, apply an erase pulse to the memory block to be erased.

[0048] In the embodiment of the present invention, the erased state can be defined as: each storage unit in the storage block to be erased is in a high level state; the unerased state is: each storage unit in the storage block to be erased , there are memory cells in the low state.

[0049] In the specific application, under the situation that the memory block to be erased is in an unerased state, it is illustrated that the memory block to be erased needs to be e...

Embodiment 3

[0058] refer to image 3 , which shows a block diagram of a device for erasing a non-volatile memory, which may specifically include:

[0059] Verification module 310, is used for erasing state verification of storage block to be erased;

[0060] The selection module 320 is configured to not apply an erasing pulse to the storage block to be erased when the storage block to be erased is in an erased state.

[0061] Preferably, refer to Figure 4 ,exist image 3 Based on this, the device also includes:

[0062] The erasing module 330 is configured to apply an erasing pulse to the memory block to be erased when the memory block to be erased is in an unerased state.

[0063] Optionally, the erasing module 330 includes:

[0064] a first erasing pulse applying submodule, configured to apply a first erasing pulse to the memory block to be erased;

[0065] A verification submodule is used to verify the erasing state of the storage block to be erased;

[0066] The second erasing...

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Abstract

The embodiment of the invention provides a nonvolatile memory erasing processing method and device. The method comprises the following steps: carrying out erasure state verification on a to-be-erasedmemory block; and under the condition that the to-be-erased memory block is in an erased state, not applying an erase pulse to the to-be-erased memory block. According to the embodiment of the invention, when erasing operation is carried out on the to-be-erased memory block in the nonvolatile storage, the erasing state verification is firstly carried out on the to-be-erased memory block, and erasing pulse is not applied to the to-be-erased memory block under the condition that the to-be-erased memory block is in the erased state. Therefore, the to-be-erased memory block in the erased state does not need to bear meaningless erase pulses, and the service life of the nonvolatile memory can be prolonged.

Description

technical field [0001] The invention relates to the technical field of memory processing, in particular to a nonvolatile memory erasing processing method and device. Background technique [0002] With the development of various electronic devices and embedded systems, non-volatile memory devices have been developed more. As an example, take the non-volatile memory NAND Flash Memory (NAND Flash Memory) as an example. NAND Flash memory stores data by reading, writing and erasing the Memorycell (storage unit). It has the advantages of fast rewriting speed and large storage capacity, and is widely used. used in electronic products. When performing an erase operation on a non-volatile memory, it is usually erased in units of Block (storage block) [0003] In the prior art, when performing an erasing operation, the nonvolatile memory first applies an erasing pulse to the storage block to be erased, and then verifies whether the erasing operation has been completed on the storage...

Claims

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Application Information

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IPC IPC(8): G11C16/16G11C16/08G11C16/34
CPCG11C16/16G11C16/08G11C16/34
Inventor 张晓伟
Owner GIGADEVICE SEMICON (BEIJING) INC