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Storage device and data writing method

A storage device and target data technology, applied in the storage field, can solve the problem of long time for adjusting conductance, etc., and achieve the effect of reducing the occupied time

Pending Publication Date: 2020-11-24
HUAWEI TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, with the ISPP technique described above, each adjustment of the conductance of a memristor cell requires a large number of "read-verify-correction" processes, resulting in a very long time to adjust the conductance

Method used

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  • Storage device and data writing method
  • Storage device and data writing method
  • Storage device and data writing method

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Embodiment Construction

[0042] The technical solution in this application will be described below with reference to the accompanying drawings. For ease of understanding, first combine figure 1 , taking the realization of the function of the neural network through the cross array as an example, the application scenario of the embodiment of the present application is introduced. It should be noted that the embodiments of the present application are also applicable to other neural networks, such as convolutional neural networks. The embodiment of the present application may also be applicable to a scenario where a memristor unit is used alone to store data.

[0043] figure 1 is a schematic diagram of the mapping relationship between the neural network and the cross array. Neural network 110 includes multiple neural network layers. In the embodiment of the present invention, the neural network layer is a logical layer concept, and one neural network layer refers to performing a neural network operati...

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Abstract

The invention discloses a storage device and a data writing method. The storage device can be applied to a neural network. The memory device includes a memristor unit, a current limiting circuit, anda write circuit. The memristor unit is of a structure of a transistor and a resistive random access memory 1T1R, wherein the current limiting circuit is used for limiting the current passing through the memristor unit as a target current, the target current is determined according to the target conductance of the memristor unit and the gate voltage of the transistor, and the target conductance isused for indicating the target data to be written into the memristor unit. And the writing circuit is used for loading a writing voltage to the memristor unit under the cooperation of the current limiting circuit so as to write the target data into the memristor unit.

Description

technical field [0001] The present application relates to the field of storage, and more specifically, relates to a storage device and a method for writing data. Background technique [0002] Memristor, full name Memristor, is a circuit device that represents the relationship between magnetic flux and charge. Memristor cells have the dimension of conductance, but unlike conductance, the resistance of a memristor is determined by the charge flowing through the memristor. When the memristor is powered off, the conductance of the memristor will not change, that is, the memristor has a memory function. If the high resistance state of the memristor is defined as "1" and the low resistance state is defined as "0", then the memristor can realize the data storage function through its own resistance value. Currently, in use, a one-transistor and one-resistive random access memory (1T1R) structure is usually adopted. 1T1R may be referred to as a memristor cell. [0003] In writing...

Claims

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Application Information

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IPC IPC(8): G11C13/00
CPCG11C13/0069G11C2013/0078G11C11/54G11C13/0007G11C13/003G11C2213/79G11C11/5685G11C2213/15G06N3/065
Inventor 高滨王侃文陈俊任张锐吴华强
Owner HUAWEI TECH CO LTD
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