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A kind of nmos power tube gate clamp drive module, drive circuit and switching power supply

A technology for driving modules and power tubes, which is applied to output power conversion devices, electrical components, etc., can solve the problems of large scale of driving circuits, high cost, and many circuit design considerations, and achieves low cost, simple structure, and reliability. high effect

Active Publication Date: 2021-02-02
SHANGHAI XINLONG SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In switching power supply chips based on CMOS technology, due to the high parasitic capacitance of MOS itself and the incomplete isolation of MOS devices, there are many considerations in the circuit design inside the chip, and the entire drive circuit is large in scale and high in cost.

Method used

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  • A kind of nmos power tube gate clamp drive module, drive circuit and switching power supply
  • A kind of nmos power tube gate clamp drive module, drive circuit and switching power supply
  • A kind of nmos power tube gate clamp drive module, drive circuit and switching power supply

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Embodiment Construction

[0020] In order to facilitate the understanding of those skilled in the art, the present invention will be further described in detail below in conjunction with specific embodiments.

[0021] The embodiment of the present invention firstly provides a switching power supply, please refer to figure 1 , including a power supply circuit 20 , an output circuit 30 and a switching power supply drive circuit 10 . One end of the switching power supply driving circuit 10 is connected to the power supply circuit 20 , and the other end of the switching power supply driving circuit 10 is connected to the output circuit 30 .

[0022] In this embodiment, the power supply circuit 20 includes an input DC power supply VCC and an input filter capacitor C1 connected in parallel. The input DC power supply VCC in the embodiment of the present invention may be a DC voltage in the range of 4.5V-90V. Since the switching power supply driving circuit of the present invention has good anti-latch abilit...

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PUM

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Abstract

The invention provides an NMOS power tube grid clamping driving module, a driving circuit and a switching power supply, the NMOS power tube grid clamping driving module comprises a BOOST capacitor charging module, a reference current source module, a level transfer module and a power tube driving module, and the NMOS power tube grid clamping driving module is realized by adopting a transistor integrated circuit process. Compared with the prior art, the NMOS driving function with complete functions can be achieved through fewer transistors, and the NMOS power tube grid clamping driving module,the driving circuit and the switching power supply have the advantages of being simple in structure, low in cost and high in reliability, have good anti-latch-up capacity and anti-interference capacity due to the fact that all devices are isolated from one another in the transistor process, and are suitable for a high-voltage and high-power switching power supply.

Description

technical field [0001] The invention relates to the field of switching power supplies, in particular to an NMOS power transistor grid clamp drive module, a switching power supply drive circuit and a switching power supply. Background technique [0002] There are two types of power transistors and power MOS tubes in the switching power supply chip. The power MOS tubes are divided into PMOS power tubes and NMOS power tubes. Because the majority of carriers are different in their internal work, NMOS power tubes are different from PMOS power tubes. The on-resistance of the tube is smaller under the same unit area, that is, the performance of the NMOS power tube is relatively better, so the application prospect of the NMOS power tube is broader. [0003] Common switching power supply chips can be divided into step-down chips and boost chips according to different internal structures. If the power tube inside the step-down chip chooses an NMOS power tube, it will generally choose ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08
CPCH02M1/08
Inventor 李瑞平池伟刘彬吕战辉
Owner SHANGHAI XINLONG SEMICON TECH CO LTD
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