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Shield gate trench type MOSFET

A shielded gate, trench technology, applied in the field of SGTMOSFET, can solve the problems of reduced specific on-resistance, breakdown voltage degradation, etc.

Pending Publication Date: 2020-12-18
娜美半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the early breakdown and degradation of breakdown voltage (BV), which always occurs at the bottom of the trench, become limitations in device design and operation
[0003] At the same time, another disadvantage of the SGT MOSFET is that due to the need for a thick shielding gate oxide layer in the charge balance region of the oxide layer, when the breakdown voltage is higher than 100V, the cell spacing will be greater than 2.5 μm, which limits the specific on-resistance. reduce

Method used

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  • Shield gate trench type MOSFET
  • Shield gate trench type MOSFET
  • Shield gate trench type MOSFET

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Embodiment Construction

[0036] The invention is explained in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. The invention can, however, be embodied in different ways and should not be limited to the embodiments described herein. For example, the description herein refers more to N-channel semiconductor integrated circuits, but clearly other devices are also possible. The following is a detailed description of preferred embodiments for practicing the present invention by referring to the accompanying drawings. Some directional terms, such as "top", "bottom", "front", "rear", "above", "below", etc., are described with reference to the orientation of the various drawings. Since the elements in the embodiments can be placed in many different directions, the orientation terms in the present invention are used for description only and should not be regarded as limitations of the present invention. It should be understood that vari...

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Abstract

The invention discloses a novel SGT MOSFET, which is provided with a super junction structure surrounding the lower part of a trench gate, so as to ensure that the whole drift region is completely exhausted, and breakdown occurs between adjacent trench gates without early breakdown at the bottom of a trench. In addition, the sensitivity of the breakdown voltage to the thickness of the oxide layerat the bottom of the trench and the depth of the trench is obviously reduced or is not influenced, and the avalanche capability of the device is also enhanced.

Description

technical field [0001] The present invention mainly relates to semiconductor devices, and more particularly, the present invention relates to a SGT MOSFET (Metal Oxide Semiconductor Field Effect Transistor) having a super junction structure surrounding the lower part of the trench gate to avoid early strike at the bottom of the trench wear, to obtain lower on-resistance and enhance the avalanche capability of the device. Background technique [0002] Such as Figure 1A and Figure 1B Shown are two typical SGT MOSFET structures, compared with conventional single-gate trench MOSFETs, Figure 1A and Figure 1B The shown SGT MOSFET has lower gate charge and on-resistance due to the oxide charge balance region in the drift region and the presence of a thick oxide layer under the gate electrode. However, early breakdown and degradation of breakdown voltage (BV), which always occurs at the bottom of the trench, become limitations in device design and operation. [0003] At the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/423H01L29/06
CPCH01L29/78H01L29/66477H01L29/4236H01L29/0615H01L29/0684H01L29/7813H01L29/66734H01L29/407H01L29/0634H01L29/42368H01L29/41766H01L29/0878
Inventor 谢福渊
Owner 娜美半导体有限公司
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